SST39SF010-90-4C-NH Silicon Storage Technology, Inc, SST39SF010-90-4C-NH Datasheet

SST39SF010-90-4C-NH

Manufacturer Part Number

SST39SF010-90-4C-NH

Description

512 Kbit/1 Mbit (x8) multi-purpose flash

Manufacturer

Silicon Storage Technology, Inc

Datasheet

1.SST39SF010-90-4C-NH.pdf (22 pages)

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FEATURES:

• Organized as 64K x8 / 128K x8

• Single 5.0V Read and Write Operations

• Superior Reliability

• Low Power Consumption:

• Sector-Erase Capability

• Fast Read Access Time:

• Latched Address and Data

PRODUCT DESCRIPTION

The SST39SF512/010 are CMOS Multi-Purpose Flash

(MPF) manufactured with SST’s proprietary, high perfor-

mance CMOS SuperFlash technology. The split-gate cell

design and thick oxide tunneling injector attain better reli-

ability and manufacturability compared with alternate

approaches. The SST39SF512/010 devices write (Pro-

gram or Erase) with a 5.0V-only power supply. The

SST39SF512/010 device conforms to JEDEC standard

pinouts for x8 memories.

Featuring

SST39SF512/010 devices provide a maximum Byte-Pro-

gram time of 30 µsec. These devices use Toggle Bit or

Data# Polling to indicate the completion of Program opera-

tion. To protect against inadvertent write, they have on-chip

hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with a guaranteed

endurance of 10,000 cycles. Data retention is rated at

greater than 100 years.

The SST39SF512/010 devices are suited for applications

that require convenient and economical updating of pro-

gram, configuration, or data memory. For all system appli-

cations, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during erase and program than alter-

native flash technologies. The total energy consumed is a

S71149-03-000 4/01

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

– Uniform 4 KByte sectors

– 70 ns

– 90 ns

high

512 Kbit / 1 Mbit (x8) Multi-Purpose Flash

performance

394

SST39SF512 / 0105.0V 512Kb / 1Mb (x8) MPF memories

SST39SF512 / SST39SF010

Byte-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Erase and Byte-Program:

• Automatic Write Timing

• End-of-Write Detection

• TTL I/O Compatibility

• JEDEC Standard

• Packages Available

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. These devices also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST39SF512/010 are offered in 32-pin PLCC packages,

32-pin TSOP , and a 600 mil, 32-pin PDIP is also available.

See Figures 1, 2, and 3 for pinouts.

Device Operation

Commands are used to initiate the memory operation func-

tions of the device. Commands are written to the device

using standard microprocessor write sequences. A com-

mand is written by asserting WE# low while keeping CE#

– Sector-Erase Time: 7 ms (typical)

– Chip-Erase Time: 15 ms (typical)

– Byte-Program Time: 20 µs (typical)

– Chip Rewrite Time:

– Internal V

– Toggle Bit

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 32-pin PLCC

– 32-pin TSOP (8mm x 14mm)

– 32-pin PDIP

2 seconds (typical) for SST39SF512

3 seconds (typical) for SST39SF010

Generation

These specifications are subject to change without notice.

MPF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

Related parts for SST39SF010-90-4C-NH

SST39SF010-90-4C-NH Summary of contents

Page 1

... Fast Erase and Byte-Program: – Sector-Erase Time (typical) – Chip-Erase Time (typical) – Byte-Program Time: 20 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39SF512 3 seconds (typical) for SST39SF010 • Automatic Write Timing – Internal V Generation PP • End-of-Write Detection – ...

Page 2

... Any commands written during the Sector- Erase operation will be ignored. ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Chip-Erase Operation The SST39SF512/010 provide Chip-Erase operation, which allows the user to erase the entire memory array to the “1s” state. This is useful when the entire device must be quickly erased ...

Page 3

... Silicon Storage Technology, Inc. Product Identification The product identification mode identifies the device as the SST39SF512 and SST39SF010 and manufacturer as SST. This mode may be accessed by software operations. Users may use the software product identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket ...

Page 4

... Top View DQ0 32- PLCC PIN 4 SST39SF512 / SST39SF010 Data Sheet SuperFlash Memory Y-Decoder I/O Buffers and Data Latches 394 ILL B1.1 SST39SF512 SST39SF010 A14 A14 A13 A13 A11 A11 OE# ...

Page 5

... Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet SST39SF010 SST39SF512 A11 A11 A13 A13 A14 A14 NC NC WE# WE A16 NC A15 A15 A12 A12 FIGURE SSIGNMENTS FOR SST39SF010 FIGURE ...

Page 6

... SST39SF010 WE OUT High Z X High OUT V High OUT SST39SF512 / SST39SF010 Data Sheet T2.3 394 Address Sector address, XXH for Chip-Erase See Table 4 T3.4 394 S71149-03-000 4/01 394 ...

Page 7

... Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet TABLE OFTWARE OMMAND Command 1st Bus Sequence Write Cycle 1 Addr Data Byte-Program 5555H AAH Sector-Erase 5555H AAH Chip-Erase 5555H AAH 4,5 Software ID Entry 5555H AAH 6 Software ID Exit XXH F0H 6 Software ID Exit 5555H AAH 1 ...

Page 8

... V 2.0 V 0.4 V 2.4 V 11.4 12.6 V pin 200 µ OWER UP IMINGS Minimum Specification 10,000 100 100 + SST39SF512 / SST39SF010 Data Sheet Test Conditions Address input f=1/T Min Max DD DD CE#=OE#=V , WE#=V , all I/Os open IL IH CE#=WE#=V , OE#= CE#= Max CE#=V -0.3V Max ...

Page 9

... Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet AC CHARACTERISTICS TABLE EAD YCLE IMING Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time CE# Low to Active Output CLZ ...

Page 10

... ADDRESS A MS-0 CE# OE WE# HIGH-Z DQ 7-0 Note Most significant address for SST39SF512 and A 16 for SST39SF010 FIGURE EAD YCLE IMING 5555 ADDRESS OE# CE# DQ 7-0 AA SW0 Note Most significant address for SST39SF512 and A 16 for SST39SF010 ...

Page 11

... for SST39SF512 and A 16 for SST39SF010 FIGURE 6: CE# C ONTROLLED ADDRESS A MS-0 CE# OE# WE Note Most significant address for SST39SF512 and A 16 for SST39SF010 FIGURE ATA OLLING IMING ©2001 Silicon Storage Technology, Inc. INTERNAL PROGRAM OPERATION STARTS ...

Page 12

... ADDRESS A MS-0 CE# OE# WE Note: Toggle bit output is always high first Most significant address for SST39SF512 and A 16 for SST39SF010 FIGURE OGGLE IT IMING 5555 ADDRESS A MS-0 CE# OE WE# DQ 7-0 AA SW0 Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met ...

Page 13

... Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met. (See Table 10 Sector Address Most significant address for SST39SF512 and A 16 for SST39SF010 FIGURE 10: WE# C ONTROLLED Three-byte sequence for ...

Page 14

... ADDRESS A 14-0 DQ 7-0 AA CE# OE WE# SW0 FIGURE 12 OFTWARE XIT AND ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit Multi-Purpose Flash 2AAA 5555 IDA T WHP SW1 SW2 R ESET 14 SST39SF512 / SST39SF010 Data Sheet 394 ILL F10.0 S71149-03-000 4/01 394 ...

Page 15

... Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet V IHT INPUT V ILT AC test inputs are driven at V (2.4V) for a logic “1” and V IHT inputs and outputs are V (2.0 V) and V HT FIGURE 13 NPUT UTPUT TO DUT FIGURE 14 EST OAD XAMPLE © ...

Page 16

... FIGURE 15 YTE ROGRAM LGORITHM ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Start Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: A0H Address: 5555H Byte Address/Byte Data Wait for end of Program (TBP' ...

Page 17

... Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet Internal Timer Program/Erase Initiated Wait SCE Program/Erase Completed FIGURE 16 AIT PTIONS ©2001 Silicon Storage Technology, Inc. Toggle Bit Byte-Program/ Sector Erase Initiated Read byte Read same No byte No Does DQ 6 match? ...

Page 18

... Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: F0H Address: 5555H Wait T IDA Return to normal operation C F OMMAND LOWCHARTS 18 SST39SF512 / SST39SF010 Data Sheet Load data: F0H Address: XXH Wait T IDA Return to normal operation 394 ILL F15.1 S71149-03-000 4/01 394 ...

Page 19

... Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet Chip-Erase Command Sequence Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 80H Address: 5555H Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 10H Address: 5555H ...

Page 20

... SST39SF512-90-4C-U3 SST39SF512-70-4I-NH SST39SF512-70-4I-WH SST39SF512-90-4I-NH SST39SF512-90-4I-WH SST39SF010 Valid combinations SST39SF010-70-4C-NH SST39SF010-70-4C-WH SST39SF010-90-4C-NH SST39SF010-90-4C-WH SST39SF010-90-4C-U4 SST39SF010-90-4I-NH SST39SF010-90-4I-WH Example: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ...

Page 21

... Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet PACKAGING DIAGRAMS TOP VIEW .485 .495 .447 Optional .453 Pin #1 Identifier .042 .048 .042 .048 .585 .547 .595 .553 .050 BSC. Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. ...

Page 22

... Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit Multi-Purpose Flash 1.645 1.655 .170 .200 .120 .150 .016 .100 BSC .022 (PDIP) www.SuperFlash.com or www.ssti.com 22 SST39SF512 / SST39SF010 Data Sheet .600 .625 .530 .550 7˚ 4 PLCS. 0˚ 15˚ .008 .012 .600 BSC 32.pdipPH-ILL.2 S71149-03-000 4/01 ...

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