SST39VF080-70-4C-EK Silicon Storage Technology, Inc, SST39VF080-70-4C-EK Datasheet

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SST39VF080-70-4C-EK

Manufacturer Part Number
SST39VF080-70-4C-EK
Description
8 Mbit (x8) multi-purpose flash
Manufacturer
Silicon Storage Technology, Inc
Datasheet
FEATURES:
• Organized as 1M x8 / 2M x8
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption:
• Sector-Erase Capability
• Block-Erase Capability
• Fast Read Access Time:
• Latched Address and Data
PRODUCT DESCRIPTION
The SST39LF/VF080 and SST39LF/VF016 devices are
1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF) manu-
factured with SST’s proprietary, high performance CMOS
SuperFlash technology. The split-gate cell design and thick
oxide tunneling injector attain better reliability and manufac-
turability compared with alternate approaches. The
SST39LF080/016 write (Program or Erase) with a 3.0-3.6V
power supply. The SST39VF080/016 write (Program or
Erase) with a 2.7-3.6V power supply. They conform to
JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39LF/
VF080 and SST39LF/VF016 devices provide a typical
Byte-Program time of 14 µsec. The devices use Toggle Bit
or Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, they have
on-chip hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
The SST39LF/VF080 and SST39LF/VF016 devices are
suited for applications that require convenient and econom-
ical updating of program, configuration, or data memory.
For all system applications, they significantly improve per-
formance and reliability, while lowering power consumption.
©2001 Silicon Storage Technology, Inc.
S71146-03-000 6/01
1
– 3.0-3.6V for SST39LF080/016
– 2.7-3.6V for SST39VF080/016
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Current: 15 mA (typical)
– Standby Current: 4 µA (typical)
– Auto Low Power Mode: 4 µA (typical)
– Uniform 4 KByte sectors
– Uniform 64 KByte blocks
– 55 ns for SST39LF080/016
– 70 and 90 ns for SST39VF080/016
SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016
8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
SST39LF/VF080 / 0163.0 & 2.7V 8Mb / 16Mb (x8) MPF memories
396
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
• Fast Erase and Byte-Program:
• Automatic Write Timing
• End-of-Write Detection
• CMOS I/O Compatibility
• JEDEC Standard
• Packages Available
They inherently use less energy during Erase and Program
than alternative flash technologies. The total energy con-
sumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash technologies. They also improve flexibility while lower-
ing the cost for program, data, and configuration storage
applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39LF/VF080 and SST39LF/VF016 are offered in 40-
lead TSOP and 48-ball TFBGA packaging. See Figures 1
and 2 for pinouts.
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
– Internal V
– Toggle Bit
– Data# Polling
– Flash EEPROM Pinouts and command sets
– 40-lead TSOP (10mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
15 seconds (typical) for SST39LF/VF080
30 seconds (typical) for SST39LF/VF016
PP
Generation
These specifications are subject to change without notice.
MPF is a trademark of Silicon Storage Technology, Inc.
Data Sheet

Related parts for SST39VF080-70-4C-EK

SST39VF080-70-4C-EK Summary of contents

Page 1

... Block-Erase Capability – Uniform 64 KByte blocks • Fast Read Access Time: – for SST39LF080/016 – 70 and 90 ns for SST39VF080/016 • Latched Address and Data PRODUCT DESCRIPTION The SST39LF/VF080 and SST39LF/VF016 devices are CMOS Multi-Purpose Flash (MPF) manu- factured with SST’ ...

Page 2

... During the Program operation, the only valid reads ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 are Data# Polling and Toggle Bit. During the internal Pro- gram operation, the host is free to perform additional tasks. Any commands issued during the internal Program opera- tion are ignored ...

Page 3

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet The actual completion of the nonvolatile write is asynchro- nous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i ...

Page 4

... Address CE# OE# WE# ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Product Identification Mode Exit/ CFI Mode Exit and In order to return to the standard Read mode, the Software Product Identification mode must be exited. Exit is accom- plished by issuing the Software ID Exit command sequence, which returns the device to the Read operation ...

Page 5

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet SST39LF/VF160 SST39LF/VF080 A16 A16 A15 A15 A14 A14 A13 A13 A12 A12 A11 A11 WE# WE A18 A18 FIGURE ...

Page 6

... Write Inhibit Product Identification Software Mode can but no other value ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 -A address lines will select the block 3.0-3.6V for SST39LF080/016 2.7-3.6V for SST39VF080/016 for SST39LF/VF016 20 OE# WE# ...

Page 7

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet TABLE OFTWARE OMMAND Command 1st Bus Sequence Write Cycle 1 Addr Data Byte-Program 5555H AAH Sector-Erase 5555H AAH Block-Erase 5555H AAH Chip-Erase 5555H AAH 4,5 Software ID Entry 5555H AAH 4 CFI Query Entry ...

Page 8

... Maximum time out for buffer program 2 25H 01H Maximum time out for individual Sector/Block-Erase 2 26H 01H Maximum time out for Chip-Erase 2 1. 0030H for SST39LF080/016 and 0027H for SST39VF080/016 TABLE EVICE EOMETRY NFORMATION FOR Address Data Data ...

Page 9

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet TABLE EVICE EOMETRY NFORMATION FOR Address Data Data 27H 15H Device size = 2 28H 00H Flash Device Interface description; 0000H = x8-only asynchronous interface 29H 00H 2AH 00H Maximum number of byte in multi-byte write = 2 ...

Page 10

... Industrial -40°C to +85° ONDITIONS OF EST Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns Output Load . . . . . . . . . . . . . . . . . . . . C Output Load . . . . . . . . . . . . . . . . . . . . C See Figures 14 and 15 ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 V DD 3.0-3. 2.7-3.6V 2.7-3. for SST39LF080/016 L = 100 pF for SST39VF080/016 L 10 Data Sheet + 0 ...

Page 11

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet TABLE PERATING HARACTERISTICS V = 3.0-3.6V SST39LF080/016 FOR DD Symbol Parameter I Power Supply Current DD Read Program and Erase I Standby V Current Auto Low Power ALP I Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage ...

Page 12

... Block-Erase BE T Chip-Erase SCE 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 ARAMETERS 2.7-3.6V AND FOR SST39LF080/016-55 SST39VF080/016-70 Min Max ...

Page 13

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet ADDRESS A MS-0 CE# OE WE# HIGH-Z DQ 7-0 Note Most significant address for SST39LF/VF080 and A 20 for SST39LF/VF016. FIGURE EAD YCLE IMING 5555 ADDRESS WPH ...

Page 14

... Note Most significant address for SST39LF/VF080 and A 20 for SST39LF/VF016. FIGURE ATA OLLING IMING ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 2AAA 5555 ADDR CPH DATA ...

Page 15

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet ADDRESS A MS-0 CE# OE# WE Note Most significant address for SST39LF/VF080 and A 20 for SST39LF/VF016. FIGURE OGGLE IT IMING 5555 ADDRESS A MS-0 CE# OE WE# DQ 7-0 AA SW0 Note: The device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met ...

Page 16

... Table 14 Most significant address for SST39LF/VF080 and A 20 for SST39LF/VF016. FIGURE 10: WE# C ONTROLLED ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 SIX-BYTE CODE FOR BLOCK-ERASE 2AAA 5555 5555 2AAA 55 ...

Page 17

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet THREE-BYTE SEQUENCE FOR SOFTWARE ID ENTRY ADDRESS A 14-0 5555 2AAA CE# OE WE# DQ 7-0 AA SW0 Note: Device ID = D9H for SST39LF/VF016 D8H for SST39LF/VF080 FIGURE 11 OFTWARE NTRY AND THREE-BYTE SEQUENCE FOR CFI QUERY ENTRY ...

Page 18

... ADDRESS A 14-0 DQ 7-0 AA CE# OE WE# SW0 FIGURE 13 OFTWARE XIT ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 2AAA 5555 IDA T WHP SW1 SW2 /CFI E XIT 18 Data Sheet 396 ILL F13.0 S71146-03-000 6/01 ...

Page 19

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet V IHT INPUT V ILT AC test inputs are driven at V (0.9 V IHT for inputs and outputs are V (0 FIGURE 14 NPUT UTPUT TO DUT FIGURE 15 EST OAD XAMPLE ©2001 Silicon Storage Technology, Inc. ...

Page 20

... FIGURE 16 YTE ROGRAM LGORITHM ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Start Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: A0H Address: 5555H Load Byte Address/Byte Data Wait for end of ...

Page 21

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet Internal Timer Program/Erase Initiated Wait SCE Program/Erase Completed FIGURE 17 AIT PTIONS ©2001 Silicon Storage Technology, Inc. Toggle Bit Program/Erase Initiated Read byte Read same No byte No Does DQ 6 match? ...

Page 22

... Address: 5555H Wait T IDA Read CFI data FIGURE 18: S ID/CFI C OFTWARE ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Command Sequence Load data: AAH Load data: AAH Address: 5555H Address: 5555H Load data: 55H Load data: 55H ...

Page 23

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet Chip-Erase Command Sequence Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 80H Address: 5555H Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 10H ...

Page 24

... Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Suffix2 - XX Package Modifier ...

Page 25

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet PACKAGING DIAGRAMS Pin # 1 Identifier 0.70 0.50 Note: 1. Complies with JEDEC publication 95 MO-142 CD dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (min/max). 3. Coplanarity: 0.1 (±.05) mm. 4. Maximum allowable mold flash is 0.15mm at the package ends, and 0.25mm between leads. ...

Page 26

... B3K ACKAGE ODE Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 BOTTOM VIEW 4.00 6.00 ± 0.20 0. 1.10 ± 0.10 0.15 0.35 ± ...

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