CEM9939A Chino-Excel Technology Corp, CEM9939A Datasheet

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CEM9939A

Manufacturer Part Number
CEM9939A
Description
Manufacturer
Chino-Excel Technology Corp
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEM9939A
Manufacturer:
CEM
Quantity:
2 500
Part Number:
CEM9939A
Manufacturer:
CET
Quantity:
20 000
FEATURES
ABSOLUTE MAXIMUM RATINGS
2001.November
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Lead free product is acquired.
30V, 7A, R
-30V, -3.5A, R
Super high dense cell design for extremely low R
High power and current handing capability.
Surface mount Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
DS(ON)
DS(ON)
R
DS(ON)
DS(ON)
= 30m
= 42m
Parameter
Parameter
= 100m
= 160m
a
@V
@V
GS
GS
@V
@V
= 10V.
= 4.5V.
GS
GS
= -10V.
= -4.5V.
b
SO-8
DS(ON)
T
A
5 - 245
= 25 C unless otherwise noted
.
1
Symbol
Symbol
T
R
V
V
J
I
P
DM
,T
I
DS
GS
D
D
JA
stg
N-Channel
30
30
7
20
CEM9939A
-55 to 150
D
8
1
S
Limit
1
1
62.5
2.0
D
G
7
2
P-Channel
1
1
-3.5
-30
-14
http://www.cetsemi.com
D
S
6
3
20
2
2
D
G
5
4
2
2
Units
Units
C/W
W
V
V
A
A
C
5

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CEM9939A Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient 2001.November = 10V. = 4.5V. = -10V -4.5V DS(ON) SO unless otherwise noted A Symbol stg Symbol 245 CEM9939A N-Channel P-Channel Units 30 - ...

Page 2

... V = 10V d(off 15V 10V 0V 246 CEM9939A Min Typ Max 100 -100 DS = 250 µ 3. 804 = 0V, GS 328 1A, ...

Page 3

... R GS GEN t d(off -10V -3.5A -10V 0V -1. 247 CEM9939A Min Typ Max Units - µ 100 -100 100 m 110 160 m 3 4.5 S 810 pF = 0V, 350 pF 130 ...

Page 4

... D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - Junction Temperature Figure 5. Gate Threshold Variation with Temperature V =10,8,7,6,5V GS 2.0 2.5 3 100 125 150 5 - 248 CEM9939A - =125 Gate-to-Source Voltage (V) GS Figure 2. Transfer Characteristics 2 =10V GS 1.9 1.6 1.3 1.0 0.7 ...

Page 5

... T , Junction Temperature Figure 11. Gate Threshold Variation with Temperature 20 16 =10,7,6,5V 12 2.5 3.0 2.2 1.9 1.6 1.3 1.0 0.7 0 100 125 150 Figure 12. Body Diode Forward Voltage 5 - 249 CEM9939A - =125 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Figure 8. Transfer Characteristics I =-3 =-10V GS -100 - ...

Page 6

... Qg, Total Gate Charge (nC) Figure 13. Gate Charge P-CHANNEL 10 V =-10V DS I =-3. Qg, Total Gate Charge (nC) Figure 15. Gate Charge 250 CEM9939A R Limit DS(ON 10ms 100ms = =150 C J Single Pulse - ...

Page 7

... Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve d(on) 90% V OUT V OUT 10% 50 10% PULSE WIDTH Figure 18. Switching Waveforms - 251 CEM9939A t off t d(off 90% INVERTED 10% 90% 50 (t)=r ( θJA θ =See Datasheet θJA 3 ...

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