CEM8206

Manufacturer Part NumberCEM8206
ManufacturerChino-Excel Technology Corp
CEM8206 datasheet
 


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Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 6A , R
=20m
@V
DS(ON)
R
=30m
@V
DS(ON)
Super high dense cell design for extremely low R
High power and current handing capability.
Surface Mount Package.
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
a
Drain Current-Continuous
-Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
=4.5V.
GS
=2.5V.
GS
.
DS(ON)
SO-8
1
=25 C unless otherwise noted)
A
Symbol
V
DS
V
GS
I
D
I
DM
a
I
S
a
P
D
T
, T
J
STG
a
R
JA
5-73
CEM8206
Feb. 2003
D
D
D
D
1
1
2
2
8
7
6
5
1
2
3
4
S
G
S
G
1
1
2
2
Limit
Unit
20
V
V
12
6
A
A
24
A
6
W
2
-55 to 150
C
C
/W
62.5
5

CEM8206 Summary of contents