CEM4804 Chino-Excel Technology Corp, CEM4804 Datasheet

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... CEM4804 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V , 7. =20m DS(ON) R =30m DS(ON) Super high dense cell design for extremely low R High power and current handing capability. Surface Mount Package. ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current ...

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... D(ON 1A 10V Ω D(OFF) GEN =10V 3.5A =10V 5-99 CEM4804 C Min Typ Max Unit 30 µ 100 mΩ mΩ 10V 10 7 857 343 P 105 ...

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... CEM4804 ELECTRICAL CHARACTERISTICS (T Parameter DRAIN-SOURCE DIODE CHARACTERISTICS 5 Diode Forward Voltage Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing 0 Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 1200 1000 ...

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... I , Drain-Source Current (A) DS Figure 7. Transconductance Variation with Drain Current 10 V =15V DS I =3. Qg, Total Gate Charge (nC) Figure 9. Gate Charge CEM4804 1.15 I =250 A D 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature 50 10 1.0 =10V 0.1 12 0.6 0 Body Diode Forward Voltage (V) SD Figure 8 ...

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... CEM4804 GEN Figure 11. Switching Test Circuit D=0.5 1 Duty Cycle=0.5 0.2 -1 0.1 10 0.2 0.05 0.1 0.02 0.1 0.05 0. 0.02 Single Pulse -3 0. Figure 13. Normalized Thermal Transient Impedance Curve Figure 13. Normalized Thermal Transient Impedance Curve OUT G S Single Pulse - ...