CEU9926 Chino-Excel Technology Corp, CEU9926 Datasheet

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CEU9926

Manufacturer Part Number
CEU9926
Description
Manufacturer
Chino-Excel Technology Corp
Datasheet
6
CED9926/CEU9926
N-Channel Logic Level Enhancement Mode Field Effect Transistor
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
THERMAL CHARACTERISTICS
FEATURES
20V , 26A , R
Super high dense cell design for extremely low R
High power and current handling capability.
TO-251 & TO-252 package.
Gate-Source Voltage
Drain Current-Continuous
Drain-Source Diode Forward Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
R
Parameter
DS(ON)
DS(ON)
-Pulsed
=30m
=40m
Derate above 25 C
G
CEU SERIES
TO-252AA(D-PAK)
S
@V
@V
@Tc=25 C
GS
GS
=4.5V.
D
=2.5V.
6-82
CED SERIES
TO-251(l-PAK)
T
Symbol
DS(ON)
J
R
R
V
, T
V
I
P
DM
I
GS
I
DS
S
D
D
STG
JC
JA
.
-55 to 175
G
Limit
0.25
12
26
38
20
26
78
50
4
PRELIMINARY
Unit
D
W/ C
S
W
C
C
V
V
A
A
A
C
/W
/W

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CEU9926 Summary of contents

Page 1

... CED9926/CEU9926 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 20V , 26A , R =30m DS(ON) R =40m DS(ON) 6 Super high dense cell design for extremely low R High power and current handling capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage ...

Page 2

... Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge CED9926/CEU9926 = 25 C unless otherwise noted) C Symbol Condition V = 0V, I 250µ DSS ...

Page 3

... CED9926/CEU9926 ELECTRICAL CHARACTERISTICS (T Parameter DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage 6 Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 1000 800 600 400 200 ...

Page 4

... CED9926/CEU9926 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 - 100 125 150 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Drain-Source Current (A) DS Figure 7. Transconductance Variation with Drain Current =10V Qg, Total Gate Charge (nC) Figure 9 ...

Page 5

... CED9926/CEU9926 GEN 6 Figure 11. Switching Test Circuit 0 10 D=0.5 0 0.1 0.05 0. Figure 13. Normalized Thermal Transient Impedance Curve OUT G S Single Pulse - Square Wave Pulse Duration (sec) 6- d(off) d(on) 90% V OUT INVERTED ...

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