CEU6030L Chino-Excel Technology Corp, CEU6030L Datasheet

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CEU6030L

Manufacturer Part Number
CEU6030L
Description
Manufacturer
Chino-Excel Technology Corp
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEU6030LZ
Manufacturer:
CET
Quantity:
500
FEATURES
ABSOLUTE MAXIMUM RATINGS
1998.March
N-Channel Enhancement Mode Field Effect Transistor
30V, 40A, R
Super high dense cell design for extremely low R
Lead free product is acquired.
TO-251 & TO-252 package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
R
DS(ON)
DS(ON)
= 15.5m
= 22m
Parameter
Parameter
a
- Derate above 25 C
CEU SERIES
TO-252(D-PAK)
G
@V
S
@V
GS
C
GS
= 25 C
= 4.5V.
= 10V.
D
CED6030L/CEU6030L
DS(ON)
CED SERIES
TO-251(I-PAK)
T c = 25 C unless otherwise noted
6 - 78
.
Symbol
Symbol
T
R
R
V
V
J
I
P
I
DM
,T
DS
GS
D
D
JC
JA
stg
G
-55 to 175
Limit
Limit
120
0.3
30
40
50
50
3
20
D
S
http://www.cetsemi.com
Units
Units
W/ C
C/W
C/W
W
V
V
A
A
C

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CEU6030L Summary of contents

Page 1

... Gate-Source Voltage Drain Current-Continuous a Drain Current-Pulsed Maximum Power Dissipation @ T - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1998.March CED6030L/CEU6030L = 10V 4.5V DS(ON) D CED SERIES TO-251(I-PAK unless otherwise noted Symbol ...

Page 2

... Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. CED6030L/CEU6030L unless otherwise noted Symbol Test Condition 0V 250 µ ...

Page 3

... V , Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CED6030L/CEU6030L 2.5 3.0 2.2 1.9 1.6 1.3 1.0 0.7 0 125 150 - =125 Gate-to-Source Voltage (V) GS Figure 2 ...

Page 4

... GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve CED6030L/CEU6030L DS(ON = =175 C J Single Pulse - Figure 8. Maximum Safe t on ...

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