CEP70N06 Chino-Excel Technology Corp, CEP70N06 Datasheet

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CEP70N06

Manufacturer Part Number
CEP70N06
Description
Manufacturer
Chino-Excel Technology Corp
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEP70N06
Manufacturer:
SANKEN
Quantity:
30 000
Part Number:
CEP70N06
Manufacturer:
CET
Quantity:
9 800
FEATURES
ABSOLUTE MAXIMUM RATINGS
2004.December
N-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
60V, 70A, R
Super high dense cell design for extremely low R
TO-220 & TO-263 package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
DS(ON)
= 13m
Parameter
Parameter
a
- Derate above 25 C
CEB SERIES
TO-263(DD-PAK)
@V
GS
d
C
d
= 25 C
= 10V.
CEP70N06/CEB70N06
DS(ON)
CEP SERIES
TO-220
T c = 25 C unless otherwise noted
4 - 142
.
Symbol
Symbol
T
R
R
V
V
E
J
I
P
I
I
DM
,T
AS
DS
GS
D
AS
D
JC
JA
stg
G
-55 to 175
Limit
Limit
62.5
280
150
480
1.0
1.0
60
70
50
20
D
http://www.cetsemi.com
S
Units
Units
W/ C
C/W
C/W
mJ
W
V
V
A
A
A
C

Related parts for CEP70N06

CEP70N06 Summary of contents

Page 1

... Maximum Power Dissipation @ T - Derate above 25 C Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2004.December CEP70N06/CEB70N06 = 10V DS(ON) CEP SERIES TO-220 unless otherwise noted Symbol V ...

Page 2

... Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 260 50A 24V Starting CEP70N06/CEB70N06 unless otherwise noted Symbol Test Condition 0V 250 µ A DSS GS D ...

Page 3

... V , Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CEP70N06/CEB70N06 120 100 2.6 2.2 1.8 1.4 1.0 0.6 0 125 150 4 - 144 =125 ...

Page 4

... GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve CEP70N06/CEB70N06 DS(ON = =175 C J Single Pulse Figure 8. Maximum Safe ...

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