CEP50N06 Chino-Excel Technology Corp, CEP50N06 Datasheet

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CEP50N06

Manufacturer Part Number
CEP50N06
Description
Manufacturer
Chino-Excel Technology Corp
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEP50N06
Manufacturer:
TT
Quantity:
60 000
Part Number:
CEP50N06
Manufacturer:
CET
Quantity:
2 000
Part Number:
CEP50N06
Manufacturer:
CET
Quantity:
20 000
Specification and data are subject to change without notice .
FEATURES
ABSOLUTE MAXIMUM RATINGS
N-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
60V, 50A ,R
Super high dense cell design for extremely low R
TO-220 & TO-263 package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
DS(ON)
= 17mΩ (typ) @V
Parameter
Parameter
a
- Derate above 25 C
CEB SERIES
TO-263(DD-PAK)
d
C
d
= 25 C
GS
= 10V.
CEP50N06/CEB50N06
DS(ON)
CEP SERIES
TO-220
T c = 25 C unless otherwise noted
.
1
Symbol
Symbol
T
R
R
V
V
E
J
I
P
I
I
DM
,T
AS
DS
GS
θJC
θJA
D
AS
D
stg
G
-55 to 175
Limit
Limit
0.88
1.14
62.5
±
150
131
225
60
50
50
20
D
http://www.cetsemi.com
S
Rev 2.
2007.March
Units
Units
W/ C
W/ C
W/ C
mJ
W
V
V
A
A
A
C

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CEP50N06 Summary of contents

Page 1

... Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Specification and data are subject to change without notice . CEP50N06/CEB50N06 = 10V DS(ON) CEP SERIES TO-220 unless otherwise noted ...

Page 2

... Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 90µ 50A 24V 25Ω, Starting CEP50N06/CEB50N06 unless otherwise noted Symbol Test Condition 0V 250 µ A DSS GS ...

Page 3

... V , Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CEP50N06/CEB50N06 125 100 2.6 2.2 1.8 1.4 1.0 0.6 0 125 150 - =125 ...

Page 4

... GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve CEP50N06/CEB50N06 R DS(ON = =175 C J Single Pulse d(on) 90% ...

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