CEP06N5 Chino-Excel Technology Corp, CEP06N5 Datasheet

no-image

CEP06N5

Manufacturer Part Number
CEP06N5
Description
Manufacturer
Chino-Excel Technology Corp
Datasheet
N-Channel Logic Level Enhancement Mode Field Effect Transistor
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
THERMAL CHARACTERISTICS
FEATURES
500V , 6.6A , R
Super high dense cell design for extremely low R
High power and current handling capability.
TO-220 & TO-263 package.
Gate-Source Voltage
Drain-Source Diode Forward Current
Maximum Power Dissipation
Operating and Storage Temperautre Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current-Continuous
Parameter
-Pulsed
DS(ON)
=1
Derate above 25 C
CEB SERIES
TO-263(DD-PAK)
@V
@Tc=25 C
GS
=10V.
CEP06N5/CEB06N5
4-17
CEP SERIES
TO-220
T
Symbol
DS(ON)
J
R
R
V
, T
V
I
P
DM
I
GS
I
DS
D
S
D
STG
JC
JA
.
-55 to 150
G
Limit
500
6.6
62.5
6.6
30
0.83
104
20
1.2
D
Oct. 2002
S
Unit
W/ C
C
C
W
V
V
A
A
A
C
/W
/W
4 4

Related parts for CEP06N5

CEP06N5 Summary of contents

Page 1

... Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation Derate above 25 C Operating and Storage Temperautre Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient CEP06N5/CEB06N5 =10V DS(ON) CEP SERIES TO-220 Symbol ...

Page 2

... CEP06N5/CEB06N5 ELECTRICAL CHARACTERISTICS ( Parameter DRAIN-SOURCE AVALANCHE RATING Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance ...

Page 3

... Diode Forward Voltage Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing =10,9,8, Figure 1. Output Characteristics CEP06N5/CEB06N5 =25 C unless otherwise noted) C Condition Symbol b C ISS V =25V OSS f =1.0MH Z C RSS ...

Page 4

... CEP06N5/CEB06N5 1200 1000 4 4 Ciss 800 600 400 Coss 200 Crss Drain-to Source Voltage (V) DS Figure 3. Capacitance 1.30 1.20 1.10 1.0 0.90 0.80 0.70 0.60 -50 -25 0 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 4 V =50V Drain-Source Current (A) DS Figure 7. Transconductance Variation ...

Page 5

... CEP06N5/CEB06N5 15 V =400V = Qg, Total Gate Charge (nC) Figure 9. Gate Charge GEN G S Figure 11. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve ...

Related keywords