P5506HVG ETC, P5506HVG Datasheet
P5506HVG
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P5506HVG Summary of contents
Page 1
... Unless Otherwise Noted) C SYMBOL TEST CONDITIONS STATIC 0V, I (BR)DSS GS(th 0V, V GSS 48V DSS V = 40V P5506HVG SYMBOL LIMITS ± -55 to 150 j stg MAXIMUM 62.5 LIMITS MIN ...
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... Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2 Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P5506HVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. Field Effect Transistor 5V, V ...
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... Dual N-Channel Enhancement Mode NIKO-SEM Field Effect Transistor Body Diode Forward Voltage Variation with Source Current and Temperature 100 0.1 0.01 0.001 0.0001 0 3 P5506HVG SOP-8 Lead-Free T = 125° 25° C -55° C 0.2 0.4 0.6 0.8 1.0 1 Body Diode Forward Voltage(V) SD AUG-19-2004 ...
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... Dual N-Channel Enhancement Mode NIKO-SEM Field Effect Transistor 4 P5506HVG SOP-8 Lead-Free AUG-19-2004 ...
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... Dual N-Channel Enhancement Mode NIKO-SEM SOIC-8(D) MECHANICAL DATA Dimension Min. A 4.8 3.8 B 5.8 C 0.38 0.445 D E 1. Field Effect Transistor mm Dimension Typ. Max. 4.9 5.0 H 3.9 4.0 I 6.0 6.2 J 0.51 K 1.27 L 1.55 1.75 M 0.175 0. P5506HVG mm Min. Typ. 0.5 0.715 0.18 0.254 0.22 0° 4° SOP-8 Lead-Free Max. 0.83 0.25 8° AUG-19-2004 ...