FLL57MK Eudyna Devices Inc, FLL57MK Datasheet
FLL57MK
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FLL57MK Summary of contents
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... Proven Reliability • Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’ ...
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... FLL57MK L-Band Medium & High Power GaAs FET POWER DERATING CURVE 100 150 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 2000 1500 1000 500 0 2 200 V DS =10V I DS ≈ 0.55 I DSS ...
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... Download S-Parameters, click here 3 FLL57MK S 21 +90° 0.5 GHz 4.5 2 0° 2 0.5 GHz 5.0 GHz 5.0 GHz 0.1 0.2 -90° S22 MAG ANG .661 -175.9 .669 -176.5 .660 -177.7 ...
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... FLL57MK L-Band Medium & High Power GaAs FET 2-R 1.25 (0.049) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...