JS28F128J3D-75 Numonyx, JS28F128J3D-75 Datasheet
JS28F128J3D-75
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JS28F128J3D-75 Summary of contents
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... — 2 3.6 V CCQ Packaging — 56-Lead TSOP (32, 64, 128, 256 Mbit) — 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit) Security — Enhanced security options for code protection — 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits — ...
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... Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting the Numonyx website at http://www.numonyx.com. ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Contents 1.0 Introduction .............................................................................................................. 6 1.1 Nomenclature ..................................................................................................... 6 1.2 Acronyms........................................................................................................... 6 1.3 Conventions ....................................................................................................... 7 2.0 Functional Overview .................................................................................................. 8 2.1 Block Diagram .................................................................................................. 10 2.2 Memory Map..................................................................................................... 11 3.0 Package Information ............................................................................................... 12 3.1 56-Lead TSOP Package, 32-, 64-, 128-, and 256-Mbit ............................................ 12 3.2 Easy BGA Package, 32-, 64-, 128-, and 256-Mbit .................................................. 13 4.0 Ballouts and Signal Descriptions.............................................................................. 15 4.1 Easy BGA Ballout, 32-, 64-,128-, 256-Mbit ........................................................... 15 4 ...
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... Query Structure Output ......................................................................................58 13.2 Query Structure Overview...................................................................................59 13.3 Block Status Register .........................................................................................60 13.4 CFI Query Identification String ............................................................................60 13.5 System Interface Information ..............................................................................61 13.6 Device Geometry Definition .................................................................................61 13.7 Primary-Vendor Specific Extended Query Table ......................................................62 A Additional Information.............................................................................................65 B Ordering Information ...............................................................................................66 Datasheet 4 Numonyx™ Embedded Flash Memory ( Monolithic) December 2007 316577-06 ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Revision History Date Revision Description February 2007 001 Initial release Revised the following graphics to support 256Mbit: • Figure 1, “Intel® Embedded Flash Memory ( Memory Block Diagram (32, 64 and 128, 256Mbit)” March 2007 ...
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... This document contains information pertaining to the Numonyx™ Embedded Flash Memory ( device features, operation, and specifications. The Numonyx™ Embedded Flash Memory J3 Version D ( provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based Intel 0.13 µm ETOX* VIII process technology. Offered in 256-Mbit, 128-Mbit, 64-Mbit, and 32-Mbit densities, theNumonyx™ ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) PR Protection Register PRD Protection Register Data RFU Reserved for Future Use SR Status Register SRD Status Register Data WSM Write State Machine ECR Enhanced Configuration Register 1.3 Conventions h: Hexadecimal Suffix k (noun): 1,000 M (noun): 1,000,000 Nibble 4 bits ...
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... A 128-bit Protection Register has multiple uses, including unique flash device identification. The Numonyx™ Embedded Flash Memory ( device includes new security features that were not available on the (previous) 0.25µm and 0.18µm versions of the J3 family. These new security features prevent altering of code through different protection schemes that can be implemented, based on user requirements. The Numonyx™ ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Memory Blocks are selectively and individually lockable in-system. Individual block locking uses block lock-bits to lock and unlock blocks. Block lock-bits gate block erase and program operations. Lock-bit configuration operations set and clear lock-bits (using the Set Block Lock-Bit and Clear Block Lock-Bits commands). The Status Register indicates when the WSM’ ...
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... Input Buffer 128-Mbit 256-Mbit Address Latch X-Decoder Address Counter Datasheet 10 Numonyx™ Embedded Flash Memory ( Monolithic Output Input Buffer Buffer Query Identifier Register Status Register Multiplexer Data Comparator Y -Gating 32-Mbit: Thirty-two 64-Mbit: Sixty-four ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 2.2 Memory Map Figure 2: Numonyx™ Embedded Flash Memory ( Monolithic) Memory Map A[24-0]: 256 Mbit A [23-0]:128 Mbit A [22-0]: 64 Mbit A [21-0]: 32 Mbit 1FFFFFF 128-Kbyte Block 1FE0000 0FFFFFF 128-Kbyte Block 0FE0000 07FFFFF 128-Kbyte Block 07E0000 03FFFFF 128-Kbyte Block ...
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... Package Height Standoff Package Body Thickness Lead Width Lead Thickness Package Body Length Package Body Width Lead Pitch Terminal Dimension Lead Tip Length Datasheet 12 Numonyx™ Embedded Flash Memory ( Monolithic) See Note 2 See Notes 1 and Detail ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Table 1: 56-Lead TSOP Dimension Table Parameter Symbol Lead Count Lead Tip Angle Seating Plane Coplanarity Lead to Package Offset 3.2 Easy BGA Package, 32-, 64-, 128-, and 256-Mbit Figure 4: Easy BGA Mechanical Specifications Ball A1 Corner ...
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... Ball (Lead) Count Seating Plane Coplanarity Corner to Ball A1 Distance Along D (32/64/128/ 256 Mb) Corner to Ball A1 Distance Along E (32/64/128/ 256 Mb) Notes: 1. For Daisy Chain Evaluation Unit information refer to packaging informaiton at: www.Numonyx.com. Datasheet 14 Numonyx™ Embedded Flash Memory ( Monolithic) Millimeters Symb ol Min Nom ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 4.0 Ballouts and Signal Descriptions Numonyx™ Embedded Flash Memory ( available in two package types. All densities of the Numonyx™ Embedded Flash Memory ( Monolithic) devices are supported on both 64-ball Easy BGA and 56-lead Thin Small Outline Package (TSOP) packages ...
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... A24 exists on 256-Mbit densities and on the other densities this signal is a no-connect (NC). 4.3 Signal Descriptions Table 3 lists the active signals used on Numonyx™ Embedded Flash Memory ( Monolithic) and provides a description of each. Table 3: Signal Descriptions for Numonyx™ Embedded Flash Memory ( Monolithic) ...
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... Supply GROUND: Ground reference for device logic voltages. Connect to system ground. NC — No Connect: Lead is not internally connected; it may be driven or floated. Reserved for Future Use: Balls designated as RFU are reserved by Numonyx for future device RFU — functionality and enhancement. December 2007 316577-06 Name and Function Table 16, “ ...
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... These are stress ratings only. NOTICE: This document contains information available at the time of its release. The specifications are subject to change without notice. Verify with your local Numonyx sales office that you have the latest datasheet before finalizing a design. Table 4: Absolute Maximum Ratings ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Table 6: Power-Up/Down Sequence Power Supply Voltage V 1st CC(min) V 2nd CCQ(min) 2nd V 3rd PEN(min) † Power supplies connected or sequenced together. Device inputs must not be driven until all supply voltages reach their minimum range. RP# should be low during power transitions. ...
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... I V Power-Down Current CCD CC I CCR V Page Mode Read Current CC 8-Word Page V Program or Set CC I CCW Lock-Bit Current Datasheet 20 Numonyx™ Embedded Flash Memory ( Monolithic) 2.7 - 3.6V 2.7 - 3.6V Typ Max Unit V CC ±1 μ ±10 μ CMOS Inputs, V VccqMax ...
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... CCES Current Notes: 1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds). Contact Numonyx or your local sales office for information about typical specifications. 2. Includes STS. 3. CMOS inputs are either V ± 0 GND ± 0.2 V. TTL inputs are either ...
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... Capacitance Symbol C Input Capacitance IN C Output Capacitance OUT Notes: 1. sampled.not 100% tested +25 ° MHZ A Datasheet 22 Numonyx™ Embedded Flash Memory ( Monolithic) 2.7 - 3.6 V 2.7 - 3.6 V Min Max 2.7 3.6 2.0 (min), and above V (max). PENH PENH (min), and above V (max and can overshoot to V ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 7.0 AC Characteristics Timing symbols used in the timing diagrams within this document conform to the following convention Figure 7: Timing Signal Naming Convention Source Signal Source State Figure 8: Timing Signal Name Decoder Signal Address A Data - Read Q Data - Write ...
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... Figure 15, “AC Input/Output Reference Waveform” on page 30 4. See Equivalent Testing Load Circuit” on page 30 5. Sampled, not 100% tested. 6. For devices configured to standard word/byte read mode, R15 (t Datasheet 24 Numonyx™ Embedded Flash Memory ( Monolithic) (3) = 2.7 V–3.6 V and V CC Density 32 Mbit 64 Mbit 128 Mbit 256 Mbit ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Figure 9: Single Word Asynchronous Read Waveform Address [A] CEx [E] OE# [G] WE# [ Data [D/Q] R11 BYTE#[F] R5 RP# [P] Notes low is defined as the last edge of CE0, CE1, or CE2 that enables the device CE0, CE1, or CE2 that disables the device (see 256-Mb” ...
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... CE to Output Delay X ELQV Notes: 1. This is the recommended specification for all new designs supporting both 130nm and 65nm lithos, or for new designs that will use the 65nm lithography. Datasheet 26 Numonyx™ Embedded Flash Memory ( Monolithic R10 R7 R15 ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) C Table 12: Write Operations # Symbol RP# High Recovery to WE# (CE PHWL PHEL (WE#) Low to WE# (CE ELWL WLEL Write Pulse Width Data Setup to WE# (CE DVWH DVEH Address Setup to WE# (CE AVWH AVEH ...
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... CEx (WE#) [E (W)] WE# (CEx) [W (E)] OE# [G] DATA [D/Q] STS[R] W1 RP# [P] VPEN [V] Figure 13: Asynchronous Write to Read Waveform Address [A] CE# [E] WE# [W] OE# [G] Data [D/Q] W1 RST #/ RP# [P] VPEN [V] Datasheet 28 Numonyx™ Embedded Flash Memory ( Monolithic W11 W11 ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 7.2 Program, Erase, Block-Lock Specifications Table 13: Configuration Performance # Symbol Write Buffer Byte Program Time W16 (Time to Program 32 bytes/16 words) Byte Program Time (Using Word/Byte Program Command) for 130nm t WHQV3 W16 t Byte Program Time (Using Word/Byte Program Command) ...
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... Figure 17: Test Configuration Test Configuration CCQ CCQMIN Datasheet 30 Numonyx™ Embedded Flash Memory ( Monolithic) Parameter , this specification is not applicable) CC Test Points for a Logic "1" and 0.0 V for a Logic "0." Input timing begins, and output timing ends, at Device Under Test ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 8.0 Bus Interface This section provides an overview of Bus operations. Basically, there are three operations you can do with flash memory: Read, Program (Write), and Erase.The on- chip Write State Machine (WSM) manages all erase and program algorithms. The system CPU provides control of all in-system read, write, and erase operations through the system bus ...
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... Section 9.2, “Read Operations” on page 8.1.1 Asynchronous Page Mode Read There are two Asynchronous Page mode configurations available on Numonyx™ Embedded Flash Memory ( Monolithic) , depending on the system design requirements: • Four-Word Page mode: This is the default mode on power-up or reset. Array data can be sensed up to four words (8 Bytes time. • ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Note: For forward compatibility reasons, if the 8-word Asynchronous Page mode is used on Numonyx™ Embedded Flash Memory ( Monolithic Clear Status Register command must be executed after issuing the Set ECR command. See further details. Table 17: Enhanced Configuration Register ...
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... Flash commands fall into two categories: Basic Commands and Extended Commands. Basic commands are recognized by all Numonyx Flash devices, and are used to perform common flash operations such as selecting the read mode, programming the array, or erasing blocks. ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Table 19: Command Bus Operations Command Program Enhanced Configuration Register Program OTP Register Clear Status Register Program STS Configuration Register Read Array Read Status Register Read Identifier Codes (Read Device Information) CFI Query Word/Byte Program ...
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... Sequence Program Error 4 Error 3 Error 2 Program Suspend Status 1 Block-Locked Error 0 Datasheet 36 Numonyx™ Embedded Flash Memory ( Monolithic) Chapter 8.0, “Bus Interface”). A complete list of available Section 11.0, “Device Command Codes” on page PEN Program/ Program Program Erase Suspend Error Voltage Status Error ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 9.1.1 Clearing the Status Register The Status Register (SR) contain Status and error bits which are set by the device. SR status bits are cleared by the device, however SR error bits are cleared by issuing the Clear SR command (see Table 21: Clear Status Register Command Bus-Cycle ...
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... All programming operations require the addressed block to be unlocked, and a valid VPEN voltage applied throughout the programming operation. Otherwise, the programming operation will abort, setting the appropriate Status Register error bit(s). The following sections describe each programming method. Datasheet 38 Numonyx™ Embedded Flash Memory ( Monolithic) December 2007 316577-06 ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 9.3.1 Single-Word/Byte Programming Array programming is performed by first issuing the Single-Word/Byte Program command. This is followed by writing the desired data at the desired array address. The read mode of the device is automatically changed to Read Status Register mode, which remains in effect until another read-mode command is issued. ...
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... Valid array data is output only after the block-erase operation has finished. Datasheet 40 Numonyx™ Embedded Flash Memory ( Monolithic) Section 9.3, “Programming Operations”). Erasing is performed Table 23, “Block-Erase Command Bus-Cycle” on page 40 Setup Write Cycle ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Standby power levels are not be realized until the block-erase operation has finished. Also, asserting RP# aborts the block-erase operation, and array contents at the addressed location are indeterminate. The addressed block should be erased before programming within the block is attempted. ...
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... Check SR.7 for device status. An invalid configuration code will result in SR.4 and SR.5 being set. Note: STS Pulse mode is not supported in the Clear Lock Bits and Set Lock Bit commands. Datasheet 42 Numonyx™ Embedded Flash Memory ( Monolithic) Program Suspend Not Allowed Not Allowed Not Allowed (Table 26) ...
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... Normal Block Locking Numonyx™ Embedded Flash Memory ( Monolithic) has the unique capability of Flexible Block Locking (locked blocks remain locked upon reset or power cycle): All blocks are unlocked at the factory. Blocks can be locked individually by issuing the Set Block Lock Bit command sequence to any address within a block ...
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... Configurable Block Locking One of the unique new features on the Numonyx™ Embedded Flash Memory ( Monolithic) ,which did not exist on the previous generations of this product family, is the ability to protect and/or secure the user’s system by offering multiple level of securities: Non-Volatile Temporary ...
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... The user-programmable segment of the PR is lockable by programming Bit 1 of the Protection Lock Register (PLR Bit 0 of this location is programmed the Numonyx factory to protect the unique device number. Bit 1 is set using the Protection Program command to program “0xFFFD” to the PLR. After these bits have been programmed, no further changes can be made to the values stored in the Protection Register ...
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... VPP or VPEN, blocks within the main array cannot be altered – attempts to program or erase blocks will fail resulting in the setting of the appropriate error bit in the Status Register. By holding VPP or VPEN low, absolute write protection of all blocks in the array can be achieved. Datasheet 46 Numonyx™ Embedded Flash Memory ( Monolithic ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 10.0 ID Codes Table 31: Read Identifier Codes Code Device Code December 2007 316577-06 Address 32-Mbit 00001h 64-Mbit 00001h 128-Mbit 00001h 256-Mbit 00001h Data 0016h 0017h 0018h 001Dh Datasheet 47 ...
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... Word/Byte Program Buffered Program Block Erase Program/Erase Suspend Program/Erase Resume Lock Block Unlock Block Datasheet 48 Numonyx™ Embedded Flash Memory ( Monolithic) Section 8.4, “Device Commands” Setup Write Cycle Confirm Write Cycle Address Bus Data Bus Address Bus Register Data 0060h ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 12.0 Flow Charts Figure 19: Write to Buffer Flowchart December 2007 316577-06 Start Setup - Write 0xE8 - Block Address Check Buffer Status - Perform read operation - Read Ready Status on signal SR7 No SR7 = 1? Yes Word Count - Address = block address - Data = word count minus 1 ...
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... Address = any dev ice address - Data = 0x70 - Read Status Register SR[7:0] - Set/Reset by WSM - Set by WSM - Reset by user - See Clear Status Register Command Datasheet 50 Numonyx™ Embedded Flash Memory ( Monolithic) Start Data Cycle No SR7 = ' Erase Suspend SR6 = '1' See Suspend/Resume Flowchart ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Figure 21: Byte/Word Program Flowchart Start Write 40H, Address Write Data and Address Read Status Register 0 SR Full Status Check if Desired Byte/Word Program Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above) 1 SR.3 = Voltage Range Error ...
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... Start Write B0H Read Status Register SR SR Write FFH Read Data Array Done Reading Yes Write D0H Programming Resumed Datasheet 52 Numonyx™ Embedded Flash Memory ( Monolithic) Bus Operation Write Read Standby Standby 0 Write Read 0 Programming Completed Write No Write FFH Read Array Data ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Figure 23: Block Erase Flowchart Start Issue Single Block Erase Command 20H, Block Address Write Confirm D0H Block Address Read Status Register 0 SR Full Status Check if Desired Erase Flash Block(s) Complete December 2007 316577-06 Bus ...
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... Read Status Register SR SR Read Read or Program? Read Array No Data Done? Yes Write D0H Block Erase Resumed Datasheet 54 Numonyx™ Embedded Flash Memory ( Monolithic) Bus Operation Write Read Standby Standby 0 Write 0 Block Erase Completed Program Program Loop Write FFH Read Array Data ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Figure 25: Set Block Lock-Bit Flowchart Start Write 60H, Block Address Write 01H, Block Address Read Status Register 0 SR Full Status Check if Desired Set Lock-Bit Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above ...
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... Command Sequence SR.4 Clear Block Lock-Bits SR Clear Block Lock-Bits Successful Datasheet 56 Numonyx™ Embedded Flash Memory ( Monolithic) Bus Command Operation Clear Block Write Lock-Bits Setup Clear Block or Write Lock-Bits Confirm Read Standby Write FFH after the clear lock-bits operation to place device in read array mode ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Figure 27: Protection Register Programming Flowchart Start Write C0H (Protection Reg. Program Setup) Write Protect. Register Address/Data Read Status Register No SR Yes Full Status Check if Desired Program Complete FULL STATUS CHECK PROCEDURE Read Status Register ...
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... Query start location in Type/ maximum device bus Mode width addresses x16 device 10h x16 mode x16 device Datasheet 58 Numonyx™ Embedded Flash Memory ( Monolithic) Query data with maximum device bus width addressing Hex ASCII Hex Code Offset Value 10: 0051 “Q” ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Table 33: Summary of Query Structure Output as a Function of Device and Mode Device Query start location in Type/ maximum device bus Mode width addresses (1) x8 mode N/A Note: 1. The system must drive the lowest order addresses to access all the device's array data when the device is configured in x8 mode. Therefore, word addressing, where these lower addresses are not toggled by the system, is " ...
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... BA = Block Address beginning location (i.e., 02000h is block 2’s beginning location when the block size is 128 Kbyte). 3. Offset 15 defines “P” which points to the Primary Numonyx-Specific Extended Query Table. 13.3 Block Status Register The Block Status Register indicates whether an erase operation completed successfully or whether a given block is locked or can be accessed for flash program/erase operations ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 13.5 System Interface Information The following device information can optimize system interface software. Table 38: System Interface Information Offset Length V logic supply minimum program/erase voltage CC 1Bh 1 bits 0–3 BCD 100 mV bits 4–7 BCD volts V logic supply maximum program/erase voltage ...
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... Protection bits supported bit 7 Page-mode read supported bit 8 Synchronous read supported bit9 Simultaneous Operation Supported bit 30 CFI Link(s) to follow (32, 64, 128, 256 Mb) bit 31 Another “Optional Feature” field to follow Datasheet 62 Numonyx™ Embedded Flash Memory ( Monolithic) 64 Mbit 128 Mbit --17 --18 --02 --02 --00 ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Table 41: Primary Vendor-Specific Extended Query (Sheet (1) Offset Length P = 31h (Optional Flash Features and Commands) Supported functions after suspend: read Array, Status, Query Other supported operations are: (P+9)h 1 bits 1–7 reserved; undefined bits are “0” ...
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... J3C mark for VIL fix for customers Note: 1. The variable pointer which is defined at CFI offset 15h. Datasheet 64 Numonyx™ Embedded Flash Memory ( Monolithic) Description (Optional Flash Features and Commands) n HEX value represents the number of read- n+1 HEX value represents the maximum Hex Add ...
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... Numonyx™ Wireless Communications and Computing Package User’s Guide Note: Contact your local Numonyx or distribution sales office or visit the Numonyx home page technical documentation, tools, or the most current information on Numonyx™ Embedded Flash Memory ( December 2007 316577-06 Document/Tool http://www ...
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... TE 28F320J3D-75 TE 28F640J3D-75 JS28F320J3D-75 JS28F640J3D-75 RC 28F320J3D-75 RC 28F640J3D-75 PC 28F320J3D-75 PC 28F640J3D-75 Datasheet 66 Numonyx™ Embedded Flash Memory ( Monolithic) 64-Mbit 128-Mbit TE 28F128J3D-75 JS28F128J3D-75 RC 28F128J3D-75 PC 28F128J3D-75 Access Speed (ns) 256 Mbit = 95 32/64/128 Mbit = 75 Lithography ® Intel 0.13 micron ETOX™ VIII Process Technology Voltage ( CCQ ...