2SB722 Inchange Semiconductor Company, 2SB722 Datasheet
2SB722
Manufacturer Part Number
2SB722
Description
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SB722.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
·High Power Dissipation-
·High Current Capability
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
: V
: P
V
V
V
T
P
T
CBO
CEO
EBO
I
I
stg
C
B
C
J
(BR)CEO
C
B
Silicon PNP Power Transistors
= 150W(Max)@T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Baser Current-Continuous
Collector Power Dissipation
@T
Junction Temperature
Storage Temperature
= -160V(Min)
C
=25℃
PARAMETER
C
=25℃
a
=25℃)
-55~150
VALUE
-160
-160
150
150
-15
-5
-4
UNIT
℃
℃
W
V
V
V
A
A
isc
Product Specification
2SB722
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2SB722 Summary of contents
Page 1
... Emitter-Base Voltage EBO I Collector Current-Continuous C I Baser Current-Continuous B B Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature T stg isc Website：www.iscsemi.cn =25℃) a VALUE UNIT -160 V -160 - 150 W ℃ 150 ℃ -55~150 isc Product Specification 2SB722 ...
Page 2
... Website：www.iscsemi.cn isc Product Specification CONDITIONS I = -25mA -1mA -1mA -10A - -2A - -160V -5V -1A - 2SB722 MIN TYP. MAX UNIT -160 -160 V -3.0 V -1.5 V -0 ...