HY628100ALT1-55 HEI, HY628100ALT1-55 Datasheet

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HY628100ALT1-55

Manufacturer Part Number
HY628100ALT1-55
Description
128Kx8bit CMOS SRAM, standby current 100 uA, 55ns
Manufacturer
HEI
Datasheet
DESCRIPTION
The HY628100A is a high speed, low power and
1M bit CMOS Static Random Access Memory
organized as 131,072 words by 8bit. The
HY628100A
process technology and designed for high speed
low power circuit technology. It is particulary well
suited for used in high density low power system
application. This device has a data retention
mode that guarantees data to remain valid at a
minimum power supply voltage of 2.0V.
HY628100A
PIN CONNECTION
PIN DESCRIPTION
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.05 /Feb.99
Comment : 50ns is available with 30pF test load.
I/O1
I/O2
I/O3
A16
A14
A12
Vss
NC
A7
A6
A5
A4
A3
A2
A1
A0
/CS1
CS2
/WE
/OE
A0 ~ A16
I/O1 ~ I/O8
Vcc
Vss
Product
Pin Name
No
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
SOP
uses
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Voltage
(V)
5.0
Chip Select 1
Chip Select 2
Write Enable
Output Enable
Address Input
Data Input/Output
Power(5.0V)
Ground
Vcc
A15
/WE
A13
A8
A9
A11
/OE
A10
/CS1
I/O8
I/O7
I/O6
I/O5
I/O4
CS2
high
Pin Function
55/70/85
performance
Speed
(ns)
/WE
CS2
A11
A13
A15
A16
A12
Vcc
NC
A9
A7
A6
A5
A4
TSOP-I(Standard)
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
Current(mA)
Operation
CMOS
10
32
30
29
28
27
26
25
24
22
21
20
19
18
17
/OE
DQ8
DQ7
DQ6
DQ5
DQ4
Vss
DQ3
DQ1
A0
A1
A2
A3
/CS1
BLOCK DIAGRAM
/CS1
1mA
CS2
/WE
/OE
A16
Standby Current(uA)
A0
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(L/LL-part)
- 2.0V(min) data retention
- 32pin 525mil SOP
Standard pin configuration
- 32pin 8x20mm TSOP-I(Standard)
100
L
LL
20
MEMORY ARRAY
ROW DECODER
1024x1024
128Kx8bit CMOS SRAM
HY628100A Series
Temperature
0~70
( C)
Hyundai Semiconductor
I/O1
I/O8

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HY628100ALT1-55 Summary of contents

Page 1

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance process technology and designed for high speed low power circuit technology. It ...

Page 2

... ORDERING INFORMATION Part No. Speed HY628100AG 55/70/85 HY628100ALG 55/70/85 HY628100ALLG 55/70/85 HY628100AT1 55/70/85 HY628100ALT1 55/70/85 HY628100ALLT1 55/70/85 Comment : 50ns is available with 30pF test load. ABSOLUTE MAXIMUM RATING (1) Symbol Vcc Power Supply, Input/Output Voltage IN, OUT T Operating Temperature A T Storage Temperature STG P Power Dissipation D I Data Output Current OUT T Lead Soldering Temperature & ...

Page 3

DC ELECTRICAL CHARACTERISTICS Vcc = 5.0V 10 unless otherwise specified A Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO Icc Operating Power Supply Current I Average Operating CC1 Current ...

Page 4

AC TEST CONDITIONS (Normal), unless otherwise specified A PARAMETER Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Level Output Load Comment * : Test load is 30pF for ...

Page 5

TIMING DIAGRAM READ CYCLE 1 ADDR OE CS1 CS2 High-Z Data Out Note(READ CYCLE): 1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels ...

Page 6

WRITE CYCLE 1(/WE Controlled) ADDR CS1 CS2 WE Data In Data Data Undefined Out WRITE CYCLE 2 (/CS1 Controlled) ADDR tAS CS1 CS2 WE Data In High-Z Data High-Z Out Rev.05 /Feb.99 tWC tAW tCW tWP tAS tDW tOHZ tWC ...

Page 7

WRITE CYCLE 3 (CS2 Controlled) ADDR tAS CS1 CS2 WE Data In High-Z High-Z Data Out Notes(WRITE CYCLE write occurs during the overlap of a low /CS1, CS2 and low /WE. A write begines at the latest transition ...

Page 8

DATA RETENTION ELECTRIC CHARACTERISTIC SYM Parameter V Vcc for Data Retention DR I Data Retention Current CCDR tCDR Chip Deselect to Data Retention Time tR Operating Recovery Time Notes: 1. Typical values are under the condition tRC ...

Page 9

RELIABILITY SPEC . TEST MODE TEST SPEC. ESD HBM > 2000V MM > 250V LATCH - UP < -100mA > 100mA PACKAGE INFORMATION 32pin 525mil Small Outline Package(G) 0.810(20.574) 0.804(20.422) 0.020(0.508) 0.050(1.27)BSC 0.014(0.356) 32pin 8x20mm Thin Small Outline Package Standard(T1) ...

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