D1014 ETC ETC, D1014 Datasheet
D1014
Manufacturer Part Number
D1014
Description
D1014GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET
Manufacturer
ETC ETC
Datasheet
1.D1014.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D1014UK
Manufacturer:
SEMELAB
Quantity:
34
Part Number:
D1014UK
Manufacturer:
SEMELAB
Quantity:
20 000
查询D1014供应商
2697 Lavery Court #8 • Newbury Park, CA 91320 • (805) 375-6600 • Fax: (805) 375- 6602 • www.point9.com • www.rfmosfet.com
P O I N T N I N E
P O I N T N I N E
FEATURES
• METAL GATE
• EXTRA LOW C
• BROAD BAND
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
T e c h n o l o g i e s , I n c .
T e c h n o l o g i e s , I n c .
DIMENSIONS
BV
I
I
V
gfs
G
η
VSWR
C
C
C
DSS
GSS
from DC to 500MHz
GS(th)
iss
oss
rss
A
PS
M
DSS
B
I
Breakdown voltage, drain source
Drain leakage current
Gate leakage current
Gate threshold voltage
Transconductance (300µs pulse)
Common source power gain
Drain efficiency
Load mismatch tolerance
Input capacitance
Output capacitance
Reverse transfer capacitance
ELECTRICAL CHARACTERISTICS
Parameter
rss
E
C
H
J
K
GOLD METALLISED MULTI-PURPOSE
D
F
G
20W - 28V - 500MHz
SILICON DMOS RF FET
DM
C
D
G
H
M
A
B
E
F
K
J
I
Millimeter
1.27 X 45°
16.51
18.90
14.22
6.35
1.52
3.30
2.16
1.52
6.35
0.10
5.08
V
V
V
DS
DS
DS
P
BV
V
I
T
T
R
V
V
I
V
D
D
V
stg
j
D
GSS
THj-case
DS
GS
DS
=0V
=28V
=28V
=10mA
GS
DSS
=28V
=10V
V
=20V
Test Conditions
MAX
TOL
=0
.25
.13
.13
.13
.13
.13
.13
.05
.13
.13
.02
DS
=28V I
f=400MHz
P
Power Dissipation
Drain-source breakdown voltage
Gate-source breakdown voltage
Drain Current
Storage temperature
Maximum operating junction temperature
Thermal resistance junction-case
(T
V
.05 X 45°
O
Inches
V
V
GS
CASE
.650
.250
.060
.130
.744
.085
.560
.060
.250
.004
.200
=20W
GS
GS
=-5V
(T
I
=0
=0
ABSOLUTE MAXIMUM RATINGS
D
DQ
CASE
V
V
V
I
=100mA
D
= 25°C unless otherwise stated)
GS
DS
DS
=2A
=0.2A
MAX
TOL
.010
.005
.005
.005
.005
.005
.005
.005
.005
.005
.001
=0
=V
=0
f=1MHz
f=1MHz
f=1MHz
= 25°C unless otherwise stated)
GS
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and
metal flange is beryllium oxide. Beryllium oxide dust is
highly toxic and care must be taken during handling
and mounting to avoid damage to this area. THESE
DEVICES MUST NEVER BE THROWN AWAY WITH
GENERAL INDUSTRIAL OR DOMESTIC WASTE.
U.S. PATENTS 5,121,176 & 5,179,032
GLOBAL PATENTS PENDING
D1014 TetraFET
D1014 TetraFET
Min. Typ. Max.
20:1
1.6
70
13
60
1
120
50
2
1
7
5
Max. 2.0°C/W
-65 to 150°C
87.5W
200°C
±20V
70V
5A
mAdc
Mhos
µAdc
Unit
Vdc
Vdc
dB
pF
pF
pF
%
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D1014 Summary of contents
Page 1
... H 14.22 .05 .560 .005 I 1.52 .13 .060 .005 J 6.35 .13 .250 .005 K 0.10 .02 .004 .001 M 5.08 MAX .200 MAX D1014 TetraFET D1014 TetraFET 87.5W 70V ±20V 5A -65 to 150°C 200°C Max. 2.0°C/W Min. Typ. Max. Unit 70 Vdc 2 mAdc µAdc Vdc 1.6 Mhos 20:1 120 ...
Page 2
... 2697 Lavery Court #8 • Newbury Park, CA 91320 • (805) 375-6600 • Fax: (805) 375-6602 • www.point9.com • www.rfmosfet.com D1014 TetraFET ...
Page 3
... 2697 Lavery Court #8 • Newbury Park, CA 91320 • (805) 375-6600 • Fax: (805) 375-6602 • www.point9.com • www.rfmosfet.com D1014 TetraFET ...
Page 4
... R_RC 16 17 35.73 C_RC 14 16 11.8P MOS JFET DBODY 14 17 .MODEL D1014MOS NMOS (VTO=2.2 KP=1.8E-5 LAMBDA=0.1 .MODEL D1014JF NJF (VTO=-7.5 BETA=0.04 LAMBDA=1) .MODEL D1014DB D (CJO=88.5P RS=0.25 VJ=0.7 M=0.33 BV=70) .ENDS D1014.s2p ! Vds=28V, Idq=1A # MHz !Freq S11 !MHz mag ang 100 0.794 -158 200 0 ...