2SJ238 TOSHIBA Semiconductor CORPORATION, 2SJ238 Datasheet

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2SJ238

Manufacturer Part Number
2SJ238
Description
Power MOSFET Selection Guide with Cross Reference Data
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Specifications of 2SJ238

Dc
1992

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ238
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
2004-3
PRODUCT GUIDE
Power MOSFETs
2004
semiconductor
http://www.semicon.toshiba.co.jp/eng

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2SJ238 Summary of contents

Page 1

PRODUCT GUIDE Power MOSFETs semiconductor http://www.semicon.toshiba.co.jp/eng 2004-3 ...

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Features and Structure ..........................................................4 3. TFP Series ............................................................... New Power MOSFET Products .............................................5 4. TO-220SIS -MOSIV/VI Series .................................. Selection Guide ................................................................ ...

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Features and Structure All power MOSFETs have the following features carrier storage effect Superior frequency and switching characteristics 2) Rugged without current concentration 3) Low drive power due to voltage-controlling device 4) Easy parallel connection Toshiba Power MOSFETs ...

Page 4

New Power MOSFET Products New Power MOSFET Products All products have a protection zener diode between gate and source. Avalanche withstand capability in single and series Power MOSFET products SOP Series DSS SOP ...

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Selection Guide V (V) DSS (A) D 0.5 1 1.3 1.5 1.8 # 2SJ465(0.71) 2SK2964(0.18) # 2SK2549(0.29) 2SJ511(0.45) 2 2.3 N TPC6201(0.095) 2.5 P# TPC6105(0.11) P TPCF8301(0.11) 2.7 PS TPCF8B01(0.11) P TPCF8103(0.11) N# TPCF8201(0.049) ...

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Selection Guide V (V) DSS 100 I ( TPC8115(0.01) 2SK2839(0.04) 2SK3669(0.125) P TPC8109(0.02 TPC8014(0.014) P TPC8108(0.013 TPC8010-H(0.016) P TPC8113(0.01) 2SJ380(0.21 TPC8015-H(0.008)] N TPC8003(0.007 TPC8009-H(0.01) P TPC8107(0.007) ...

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Power MOSFET Characteristics Circuit example for DC-DC Converter Switching (high side) High-speed, trench and N-channel MOSFET (N-channel high-speed or ultra high-speed U-MOS IN Development Process of High-Speed U-MOS Series Improved trade-off between On-resistance and gate switch charge due to short-channel ...

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Ultra High-Speed U-MOS III Series Characteristics • Low gate switch charge: 14% reduction compared to high-speed U-MOS III • Low On-resistance (Al straps): 34% reduction compared to high-speed U-MOS III • Housed in SOP Advance, high current, thin and excellent ...

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Power MOSFET Characteristics MOSBD (MOSFET with SBD) Characteristics • Compact size Integrated three devices ( two MOSFETs and one SBD) into a single package • High-performance device High side: high-speed MOSFET (high-speed U-MOS Low side: MOSBD (U-MOS Conventional Circuit High ...

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SOP Advance Characteristics • Mounting area is identical with that of SOP-8. • On-resistance reduction and thin package (1.0 mm max) employing flat leads and Al straps • Achieved high current and high power dissipation by attaching an exposed heat ...

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Power MOSFET Characteristics SOP-8 Series Line-up .... [Part Number: TPC8xxx] Features • Low On-resistance and high-speed switching series are lined up. Low On-resistance Series: U-MOS III / IV High-speed switching series: high-speed U-MOS III, ultra high-speed U-MOS III • On-resistance ...

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TSSOP-8 Series Features Features • Achieved R = 17m for TPCS8204 employing U-MOS III design DS(ON) • Common-drain types are available: Ideal use for lithium-ion battery protection and reverse current protection Low On-resistance N-channel 20-V device (TSSOP-8 / dual type) ...

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Power MOSFET Characteristics Package The VS Series that achieves the one of the industries' thinnest class package (height: 0.85 mm max). VS-6 Series: Standard size (2 1.6 mm) that is suitable for general-purpose use. • VS-8 Series: The ...

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VS-6 Series Line-up .... [Part Number: TPC6xxx] Features • Achieved ultra low-On resistance employing U-MOS • Zener diode between gate and source for all products • Thin package whose height is as low as 0.85 mm (max board. ...

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Power MOSFET Characteristics 3. TFP (Thin Flat Package) Series Features TFP Stands for Thin Flat Package Thin flat package has a mounting volume 58% less than that of the TO-220SM. Separate package inputs and outputs enable stable equipment operation. Improved ...

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Heat Dissipation Characteristic Thermal resistance TFP with mounting area 33% less than that of the TO-220SM offers Rth (ch-c) and Rth (ch-a) almost equivalent to those of the TO-220SM (when mounted on an HIT board). Actual rating / heat ...

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Power MOSFET Characteristics 3-2. For Stable Circuit Operation and High-current, High-speed Switching Stable circuit operation The advantage of MOSFETs is that, because of their high input impedance, they allow high output control with low power drive. However, their disadvantage is ...

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Switching waveform When the S1 pin is not The four-pin structure used for input signal return results in a shorter rise (3 pins): time and more stable switching, all of which help reduce the risk of ...

Page 19

Power MOSFET Characteristics 4. TO-220SIS -MOS Features • The shorter the standoff height is achieved, the lower the product height on a PCB will be; hence, the mounting height is reduced by approximately 2 compared to the existing ...

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Improved Heat Dissipation <Conventional design> Comparison of Electrical Characteristics with Conventional and New Products Conventional Product 2SK2717 V (V) 900 DSS I ( 2.5(max) DS(ON) Qg(nC) 45(typ.) toff(ns) 200(typ.) Switching-Off Waveform Comparison ...

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Power MOSFET Characteristics High-integration (4.4 M cells / inch • On-resistance per unit area reduced by 15% (compared to L • Operation at logic level voltage [V GS • Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode • ...

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P-ch product line- DSS D D Package Type Part Number (V) (A) (W) 2SJ511 – 30 – 2 1.5 PW-Mini 2SJ525 – 30 – 5 1.3 TPS 2SJ537 – 50 – 5 0.9 LSTM 2SJ360 – 60 ...

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Power MOSFET Characteristics 7. U-MOS High-integration is achieved using trench structure technique. Low-voltage driving (V possible because of ultra-low On-resistance. Planar structure Source Drain Features • High density by the submicron technology ...

Page 24

With employing submicron technology and reducing gate charge, this latest series realized extremely fast speed and low R Features • Low R DS(ON) • Total gate charge (Qg) reduction • Fast speed switching • High avalanche withstanding capability Applications • ...

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Power MOSFET Characteristics 9. -MOS 200-V Series for switching in monitors Features Reduced On-resistance per unit area • Chip size smaller than conventional chips and device cost reduced • Superior breakdown voltage characteristics due to optimized cell ...

Page 26

High-performance series for 100-V AC input-switching power supplies Features Low-drive-power, high-speed (Q • Guaranteed for every device in product line • GSS Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode • Protection ...

Page 27

Power MOSFET Characteristics High-Speed -MOS 11. To allow the development of high-efficiency portable equipment, Toshiba has developed two Series of high-speed Power MOSFET devices. The two series are as follows: The High-Speed Switching Series for AC adapters and switching power ...

Page 28

III Series (V High-performance, high-speed devices for 200-V AC input-switching power supplies Features • Low drive-power, high-speed devices (Qg reduced by 60%, tf reduced by 25%) • Guaranteed GSS • Avalanche withstand capability guaranteed, ...

Page 29

Power Modules Power modules enable high-density mounting and are the simples of all multi-chip devices in structural terms. Use of these modules enables the construction of compact power supplies for electronic equipment. Line-up • S-10M Series (4in1) Polarity and Circuit ...

Page 30

Power MOSFET Product List Main Characteristics Part Series Package Type V DSS Number (V) -MOS 2SJ200 TO-3P(N) – 180 2SJ201 – 200 -MOS TO-3P(N) 2SJ304 2 TO-220NIS – -MOS 2SJ312 2 TO-220FL/SM – -MOS ...

Page 31

Power MOSFET Product List Main Characteristics Part Series Package Type V DSS Number (V) 2SK2545 -MOS TO-220NIS 600 2SK2549 -MOS PW-Mini 16 2 2SK2550 L - -MOS TO-3P(N) 50 2SK2551 2 TO-3P( -MOS 2SK2598 TO-220FL/SM 250 -MOS ...

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Main Characteristics Part Series Package Type V DSS Number (V) 2SK3068 -MOS TO-220FL/SM 500 2SK3084 U-MOS TO-220FL/SM 100 2SK3085 -MOS TO-220AB 600 -MOS 30 2SK3089 TO-220FL/SM 2 2SK3090 L - -MOS TO-220FL/SM 30 2SK3117 -MOS TO-3P(SM) 500 ...

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Power MOSFET Product List Main Characteristics Part Series Package Type V DSS Number (V) 30 TPC6003 U-MOS VS-6 20 TPC6004 U-MOS VS-6 TPC6005 U-MOS VS-6 30 TPC6101 U-MOS VS-6 – 20 U-MOS VS-6 – 30 TPC6102 TPC6103 U-MOS VS-6 – ...

Page 34

Power MOSFET Superseded Products The product number in the left-hand column below are soon to be superseded. When ordering, please choose from among the recommended products in the right-hand column. Superseded Products Electrical Characteristics Part Number DSS ...

Page 35

Power MOSFET Final-Phase and Discontinued Products (1) Final-Phase Products Recommended Part Number Replacement Products 2SJ147 2SJ304 2SJ1347 2SK2314 2SK794 2SK2610 2SK1349 2SK2391 2SK1488 2SK2601 2SK1652 2SK2698 2SK1720 2SK2266 2SK1854 2SK2952 2SK1856 2SK2698 2SK1864 2SK2776 2SK1882 2SK2232 2SK1915 2SK2777 2SK1997 2SK2385 ...

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... Discontinued Products Recommended Part Number Replacement Products 2SJ91 2SJ200 2SJ92 2SJ200 2SJ123 2SJ304 2SJ124 2SJ304 2SJ126 2SJ304 2SJ183 2SJ377 2SJ312 2SJ224 2SJ238 2SJ360 2SJ239 2SJ377 2SJ240 2SJ349 2SJ241 2SJ401 2SJ315 2SJ377 2SK271 2SK1529 2SK272 2SK1529 2SK324 2SK2698 2SK325 2SK2698 2SK355 ...

Page 37

Package List 1. Compact Surface-Mount Packages To meet requirements for compact and thin equipment, Toshiba offers various packages with power dissipation of 1.0 to 150 W and drain current addition, we offer devices housed ...

Page 38

PS-8 0.33 ± 0.05 0. 0.33 ± 0.05 0.475 0.65 2.9 0.1 ± S 0.025 TSSOP (0.525) 0.65 3.3 max 3.0 ± 0.1 0.05 Tape dimensions 0.17 0.02 ± 0.05 ...

Page 39

Package List SOP-8 8 0.595 SOP Advance 1. 0.4 0.1 0.25 M 1.27 5.5 max 5.0 0.2 0.5 0.2 0.1 0.4 0.1 0. 0.15 0.05 4.25 0.2 4 ...

Page 40

PW-Mini + 0.08 0.45 - 0.05 + 0.08 0.4 - 0.05 1.5 0 Gate 2. Drain (heat sink) 3. Source DP 6.8 max 5.2 0.2 0.6 0.15 0.95 max 0.6 0.15 2.3 2 Gate 2. Drain ...

Page 41

Package List New PW-Mold 2.3 1 0.8 max 1.05 max 1. Gate 2. Drain (heat sink) 3. Source TO-220SM 2.54 ± 0.25 1. Gate 2. Drain (heat sink) 3. Source 44 6.5 0.2 5.2 0.2 0.6 max 1.1 0.2 0.6 ...

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TFP 9.2 max 7.0 1 0.2 1.5 2.0 2 1.0 0.2 1.0 0.2 3.6 0.2 1. Drain (heat sink) 2. Gate 3. Source1 4. Source2 Tape dimensions 0.4 0.1 4.0 0.2 Reel dimensions 4 Packing quantity Unit: mm ...

Page 43

Package List LSTM 0.75 max 1.0 max 0.8 max 0.6 max 1.27 1. Source 2. Drain 3. Gate DP (Straight) 6.8 max 5.2 0.95 max 0.6 0.15 2 Gate 2. Drain (Heat Sink) 3. Source TO-220AB 10.3 max ...

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TO-220NIS 10 0.3 1.1 1.1 0.75 0.15 2.54 0.25 2. Gate 2. Drain 3. Source TO-220FL 10.3 max 1.6 max 0.76 2.54 0. Gate 2. Drain (Heat Sink) 3. Source TO-3P(N)IS 15.8 ...

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OVERSEAS SUBSIDIARIES AND AFFILIATES Toshiba America Toshiba Electronics Europe GmbH Electronic Components, Inc. Düsseldorf Head Office Headquarters-Irvine, CA Hansaallee 181, D-40549 Düsseldorf, 9775 Toledo Way, Irvine, CA 92618, U.S.A. Germany Tel: (949)455-2000 Fax: (949)859-3963 Tel: (0211)5296-0 Fax: (0211)5296-400 Boulder, CO ...

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