K4S641632C-TC80 Samsung, K4S641632C-TC80 Datasheet
K4S641632C-TC80
Specifications of K4S641632C-TC80
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K4S641632C-TC80 Summary of contents
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... CKE * Samsung Electronics reserves the right to change products or specification without notice. GENERAL DESCRIPTION The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized 1,048,576 words by 16 bits, fabricated with SAMSUNG s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...
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... K4S641632C PIN CONFIGURATION (Top view) PIN FUNCTION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable Address Bank select address 0 1 RAS Row address strobe CAS Column address strobe WE Write enable L(U)DQM Data input/output mask DQ ~ Data input/output ...
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... AC. The undershoot voltage duration Any input DDQ Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. 4. Dout is disabled OUT 5. The VDD condition of K4S641632C-60 is 3.135V~3.6V. CAPACITANCE (V = 3.3V Pin Clock RAS, CAS, WE, CS, CKE, L(U)DQM Address ...
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... I NS CC3 Operating current I CC4 (Burst mode) Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S641632C-TC** 4. K4S641632C-TL Test Condition Burst length = (min CKE V (max 15ns IL ...
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... Output timing measurement reference level Output load condition Output 870 (Fig output load circuit Note : 1. The DC/AC test Output Load of K4S641632C-60 is 30pF. 2. The VDD condition of K4S641632C-60 is 3.135V~3.6V. OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter Row active to row active delay RAS to CAS delay ...
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... K4S641632C AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol CAS latency=3 CLK cycle t CC time CAS latency=2 CAS latency=3 CLK to valid t SAC output delay CAS latency=2 CAS latency=3 Output data t OH hold time CAS latency=2 CLK high pulse width t CH CLK low pulse width ...
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... K4S641632C IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz 100MHz Voltage Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 1.8 -67.3 -226.2 1.65 -73.0 -248.0 1.5 -77.9 -269.7 1.4 -80.8 -284.3 1.0 -88.6 -344.5 0.0 -93.0 -502.4 I Characteristics (Pull-down) OL 100MHz 100MHz Voltage Min Max (V) I (mA) I (mA) 0.0 0.0 0.0 0.4 27.5 70.2 0.65 41.8 107.5 0.85 51.6 133.8 1.0 58.0 151.2 1.4 70.7 187.7 1.5 72.9 194.4 1.65 75.4 202.5 1.8 77.0 208.6 1.95 77.6 212.0 3.0 80.3 219.6 3.45 81.4 222.6 0 0.5 0 66MHz ...
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... K4S641632C V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15.30 2.6 18.31 V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) SS -2.6 -57.23 -2.4 -45.77 -2.2 -38.26 -2.0 -31.22 -1.8 -24.58 -1.6 -18.37 -1.4 -12.56 -1.2 -7.57 -1.0 -3.37 -0.9 -1.75 -0.8 -0.58 -0.7 -0.05 -0.6 0.0 -0.4 0.0 -0.2 0.0 0.0 0.0 Minimum V clamp current DD (Referenced Voltage I (mA) Minimum V clamp current -10 -20 -30 -40 -50 -60 Voltage I (mA) CMOS SDRAM ) ...
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... K4S641632C SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable column address Auto precharge enable Burst stop ...
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... K4S641632C MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with MRS Address / Function RFU RFU Test Mode A A Type Mode Register Set 0 1 Reserved 1 0 Reserved 1 1 Reserved Write Burst Length Length Burst 1 Single Bit POWER UP SEQUENCE 1. Apply power and start clock, Attempt to maintain CKE= " ...
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... K4S641632C BURST SEQUENCE (BURST LENGTH = 4) Initial Address BURST SEQUENCE (BURST LENGTH = 8) Initial Address ELECTRONICS ...
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... K4S641632C DEVICE OPERATIONS CLOCK (CLK) The clock input is used as the reference for all SDRAM opera- tions. All operations are synchronized to the positive going edge of the clock. The clock transitions must be monotonic between V and V . During operation with CKE high all inputs are ...
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... K4S641632C DEVICE OPERATIONS (Continued) MODE REGISTER SET (MRS) The mode register stores the data for controlling the various operating modes of SDRAM. It programs the CAS latency, burst type, burst length, test mode and various vendor specific options to make SDRAM useful for variety of different applications. The ...
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... K4S641632C DEVICE OPERATIONS (Continued) DQM OPERATION The DQM is used to mask input and output operations. It works similar to OE during read operation and inhibits writing during write operation. The read latency is two cycles from DQM and zero cycle for write, which means DQM masking occurs two cycles later in read cycle and occurs in the same cycle during write cycle ...
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... K4S641632C BASIC FEATURE AND FUNCTION DESCRIPTIONS 1. CLOCK Suspend 1) Clock Suspended During Write (BL=4 CLK CMD WR CKE Internal CKE DQ(CL2 DQ(CL3 DQM Operation 1) Write Mask (BL=4) CLK WR CMD DQM DQ(CL2 DQ(CL3 DQM to Data-in Mask = 0 3) DQM with Clock Suspended (Full Page Read) ...
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... K4S641632C 3. CAS Interrupt (I) 1) Read interrupted by Read (BL=4) CLK CMD ADD DQ(CL2) QA DQ(CL3) tCCD Note 2 2) Write interrupted by Write (BL=2) CLK WR WR CMD tCCD Note ADD tCDL Note 3 *Note : 1. By " Interrupt" meant to stop burst read/write by external command before the end of burst. ...
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... K4S641632C 4. CAS Interrupt (II) : Read Interrupted by Write & DQM (a) CL=2, BL=4 CLK i) CMD RD DQM DQ ii) CMD RD DQM DQ RD iii) CMD DQM DQ RD iv) CMD DQM DQ (b) CL=3, BL=4 CLK i) CMD RD DQM DQ ii) CMD RD DQM DQ RD iii) CMD DQM DQ RD iii) CMD DQM DQ RD iv) CMD DQM DQ *Note : 1. To prevent bus contention, there should be at least one gap between data in and data out. ...
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... K4S641632C 5. Write Interrupted by Precharge & DQM CLK WR CMD DQM *Note : 1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out inhibit invalid write, DQM should be issued. 3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge interrupt but only another bank precharge of four banks operation ...
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... K4S641632C 8. Burst Stop & Interrupted by Precharge 1) Normal Write (BL=4) CLK WR CMD DQM Read Interrupted by Precharge (BL=4) CLK CMD RD DQ(CL2) DQ(CL3) 9. MRS 1) Mode Register Set CLK Note 4 CMD PRE *Note : CLK RDL CLK ; Last data in to burst stop delay. BDL Read or write burst stop command is valid at every burst length ...
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... K4S641632C 10. Clock Suspend Exit & Power Down Exit 1) Clock Suspend (=Active Power Down) Exit CLK CKE Internal Note 1 CLK CMD 11. Auto Refresh & Self Refresh 1) Auto Refresh & Self Refresh CLK Note 4 CMD PRE CKE 2) Self Refresh Note 6 CLK Note 4 CMD ...
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... K4S641632C 12. About Burst Type Control Sequential Counting Basic MODE Interleave Counting Random Random column Access MODE CLK CCD 13. About Burst Length Control 1 2 Basic MODE 4 8 Full Page Special BRSW MODE Random Burst Stop MODE RAS Interrupt (Interrupted by Precharge) Interrupt ...
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... K4S641632C FUNCTION TRUTH TABLE (TABLE 1) Current CS RAS CAS State IDLE Row Active ...
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... K4S641632C FUNCTION TRUTH TABLE (TABLE 1) Current CS RAS CAS State Row Activating Refreshing Mode Register Accessing Abbreviations : RA = Row Address NOP = No Operation Command *Note : 1 ...
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... K4S641632C FUNCTION TRUTH TABLE (TABLE 2) CKE Current CKE CS n State (n- Self Refresh All Banks Precharge Power Down All ...
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... K4S641632C Single Bit Read-Write-Read Cycle(Same Page) @CAS Latency=3, Burst Length CLOCK tCC CKE *Note 1 CS tRCD tSH RAS tSS tSH CAS tSS tSH ADDR Ra tSS *Note 2 *Note 2 *Note tRAC DQ WE DQM Row Active Read ELECTRONICS ...
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... K4S641632C *Note : 1. All input except CKE & DQM can be don't care when CS is high at the CLK high going edge. 2. Bank active & read/write are controlled by BA0~BA1 BA0 Enable and disable auto precharge function are controlled by A10/AP in read/write command ...
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... K4S641632C Power Up Sequence CLOCK CKE High level is necessary CS tRP RAS CAS ADDR /AP 10 High DQM High level is necessary Precharge Auto Refresh (All Banks) ELECTRONICS tRC Auto Refresh CMOS SDRAM tRC ...
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... K4S641632C Read & Write Cycle at Same Bank @Burst Length CLOCK CKE CS tRCD RAS CAS Ra Ca ADDR / CL=2 tRAC *Note 3 DQ CL=3 tRAC *Note 3 WE DQM Row Active Read (A-Bank) (A-Bank) *Note : 1. Minimum row cycle times is required to complete internal DRAM operation. ...
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... K4S641632C Page Read & Write Cycle at Same Bank @Burst Length CLOCK CKE CS tRCD RAS CAS ADDR / CL=2 DQ CL=3 WE DQM Row Active Read (A-Bank) (A-Bank) *Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus contention ...
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... K4S641632C Page Read Cycle at Different Bank @Burst Length CLOCK CKE *Note 1 CS RAS CAS RAa RBb CAa ADDR /AP RAa RBb 10 CL=2 DQ CL=3 WE DQM Row Active Read (A-Bank) (A-Bank) Row Active (B-Bank) *Note : 1. CS can be don't cared when RAS, CAS and WE are high at the clock high going dege. ...
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... K4S641632C Page Write Cycle at Different Bank @Burst Length CLOCK CKE CS RAS CAS RAa RBb CAa ADDR /AP RAa RBb 10 DAa0 DAa1 DAa2 DQ WE DQM Row Active Write (A-Bank) (A-Bank) Row Active (B-Bank) *Note : 1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data. ...
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... K4S641632C Read & Write Cycle at Different Bank @Burst Length CLOCK CKE CS RAS CAS ADDR RAa CAa /AP RAa 10 CL=2 DQ CL=3 WE DQM Row Active Read (A-Bank) (A-Bank) *Note : 1. t should be met to complete write. CDL ELECTRONICS HIGH ...
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... K4S641632C Read & Write Cycle with Auto Precharge I @Burst Length CLOCK CKE CS RAS CAS ADDR / CL=2 CL=3 WE DQM Row Active (A-Bank) Row Active (B-Bank) *Note: ¨*¨çWhen Read(Write) command with auto precharge is issued at A-Bank after A and B Bank activation. ...
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... K4S641632C Read & Write Cycle with Auto Precharge II @Burst Length CLOCK CKE CS RAS CAS ADDR / CL=2 CL=3 WE DQM Row Active (A-Bank) *Note : *¨ç Any command to A-bank is not allowed in this period. tRP is determined from at auto precharge start point ...
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... K4S641632C Clock Suspension & DQM Operation Cycle @CAS Latency=2, Burst Length CLOCK CKE CS RAS CAS ADDR / DQM Row Active Read *Note : 1. DQM is needed to prevent bus contention. ELECTRONICS Qa0 Qa1 ...
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... K4S641632C Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length=Full page CLOCK CKE CS RAS CAS RAa CAa ADDR /AP RAa 10 CL=2 DQ CL=3 WE DQM Row Active Read (A-Bank) (A-Bank) *Note : 1. At full page mode, burst is end at the end of burst. So auto precharge is possible. ...
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... K4S641632C Write Interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length=Full page CLOCK CKE CS RAS CAS ADDR RAa CAa RAa A / DAa0 DAa1 DAa2 DAa3 DAa4 WE DQM Row Active Write (A-Bank) (A-Bank) *Note : 1. At full page mode, burst is end at the end of burst. So auto precharge is possible. ...
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... K4S641632C Burst Read Single bit Write Cycle @Burst Length CLOCK *Note 1 CKE CS RAS CAS ADDR RAa CAa /AP RAa 10 CL=2 DAa0 DQ CL=3 DAa0 WE DQM Row Active (A-Bank) Write (A-Bank) *Note : 1. BRSW modes is enabled by setting A At the BRSW Mode, the burst length at write is fixed to "1" regardless of programmed burst length. ...
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... K4S641632C Active/Precharge Power Down Mode @CAS Latency=2, Burst Length CLOCK tSS *Note 1 CKE *Note 3 CS RAS CAS ADDR DQM Precharge Power-down Entry *Note : 1. Both banks should be in idle state prior to entering precharge power down mode. 2. CKE should be set high at least 1CLK + tss prior to Row active command. ...
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... K4S641632C Self Refresh Entry & Exit Cycle CLOCK *Note 2 *Note 1 CKE tSS CS RAS CAS ADDR Hi-Z WE DQM Self Refresh Entry *Note : TO ENTER SELF REFRESH MODE 1. CS, RAS & CAS with CKE should be low at the same clcok cycle. ...
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... K4S641632C Mode Register Set Cycle CLOCK HIGH CKE CS *Note 2 RAS *Note 1 CAS *Note 3 ADDR Key Ra DQ Hi-Z WE DQM MRS New Command * All banks precharge should be completed before Mode Register Set cycle and auto refresh cycle. MODE REGISTER SET CYCLE *Note : 1. CS, RAS, CAS, & ...
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... K4S641632C Package Dimension 54-TSOP2-400AF #54 #1 0.10 MAX 0.004 0. 0.028 #28 #27 22.62 MAX 0.891 22.22 0.10 0.21 0.875 0.004 0.008 0.35 0.80 0.10 0.0315 0.014 0.004 CMOS SDRAM Unit : Millimeters 0~8 C 0.25 TYP 0.010 +0.075 0.125 -0.035 +0.003 0.005 -0.001 1.00 1.20 0.05 0.10 MAX 0.039 0.047 0.002 0.004 0.05 MIN 0.002 ...