LE28CW1001DT-15 Sanyo Semiconductor Corporation, LE28CW1001DT-15 Datasheet

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LE28CW1001DT-15

Manufacturer Part Number
LE28CW1001DT-15
Description
1M-Bit (128k x 8) Page Mode EEPROM
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Preliminary Specifications
Features
Single 3.0-Volt Read and Write Operations
CMOS Flash EEPROM Technology
Low Power Consumption:
Fast Page-Write Operation
Product Description
EEPROM manufactured with SANYO's proprietary, high
performance
Breakthrough in EEPROM cell design and process
architecture attain better reliability and manufacturability
compared
LE28CW1001D performs write in a 3.0-volt-only power
supply environment. Internal erase/program is transparent to
the user. The LE28CW1001D conforms to JEDEC standard
pinouts for byte-wide memories and is compatible with
existing industry standard EPROM, flash EPROM and
EEPROM pinouts.
LE28CW1001D provides typical byte-write time of 39
sec. The entire memory, i.e.128K bytes, can be written in as
little as 5 seconds using interface such as Toggle Bit and
DATA Polling to indicate the completion of a write cycle.
To protect against inadvertent write, the LE28CW1001D has
on-chip hardware and software data protection schemes.
Designed, manufactured and tested for a wide spectrum of
applications, the LE28CW1001D is offered with page-write
endurance 10
10 years.
*This product incorporate technology licensed from Silicon Storage Technology, Inc.
This preliminary specification is subject to change without notice.
Page-write Endurance Cycles: 10
10 Years Data Retention
Active Current: 20 mA (Max.)
Standby Current: 15
128 Bytes per Page
Page-Write Cycle: 5 ms (typical)
Complete Memory Rewrite: 5 sec. (typical)
The LE28CW1001D is a 128K×8 CMOS page mode
Featuring
4
with
cycles. Data retention is rated at greater than
CMOS
high
SANYO Electric Co., Ltd. Semiconductor Company
1-1, 1 Chome, Sakata, Oizumi-machi, Ora-gun, GUNMA, 370-0596 JAPAN
conventional
performance
Flash
A (Max.)
EEPROM
1M-Bit (128k × 8) Page Mode EEPROM
4
page
approaches.
Technology.
write,
The
the
Fast Access Time: 150 ns / 200 ns
Latched Address and Data
Automatic Write Timing with Internal V
End of Write Detection
Hardware and Software Data Protection
TTL I/O Compatibility
JEDEC Standard Byte-Wide EEPROM Pinouts
Packages Available
require reprogrammable nonvolatile storage of program or
data memory for laptop computers, desktop computers,
medical instruments, laser printers, or copiers. For all system
applications, the LE28CW1001D significantly improves
performance
consumption, when compared with floppy disk or EPROM
approaches. In addition, the EEPROM technology makes
convenient and economical updating of codes and control
programs on-line possible. The LE28CW1001D improves
flexibility while lowering the cost for program and
configuration storage applications such as operating systems,
BIOS, control programs, software I/O drivers, fonts, or
archives.
LE28CW1001D is offered in 32-pin TSOP package.
Device Operation
in functionality and features. The LE28CW1001D is
compatible to industry standard pinout and functionality.
LE28CW1001DT :32-pin TSOP (8mm × 20mm) Normal
LE28CW1001DTS :32-pin TSOP (8mm × 14mm) Normal
Toggle Bit
DATA Polling
The LE28CW1001D is best suited for application that
To meet high density, surface mount requirements, the
Both the high and medium endurance parts are identical
LE28CW1001DT/DTS-15/20
and
Revision 2.01 July 18,2000-AY/ay-1/16
reliability,
while
lowering
PP
Generation
CMOS LSI
power

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LE28CW1001DT-15 Summary of contents

Page 1

... Hardware and Software Data Protection TTL I/O Compatibility JEDEC Standard Byte-Wide EEPROM Pinouts Packages Available LE28CW1001DT :32-pin TSOP (8mm × 20mm) Normal LE28CW1001DTS :32-pin TSOP (8mm × 14mm) Normal The LE28CW1001D is best suited for application that require reprogrammable nonvolatile storage of program or Technology. ...

Page 2

... NC 9 A16 10 A15 11 A12 Figure2: Functional Block Diagram of LE28CW1001D LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM Top Viewl ( Top View ) Figure 1: Pin Assignments for 32-pin TSOP X-Address Buffers and Latches A16-A7 Y-Address Buffers and Latches A6-A0 CE Control Logic OE WE SANYO Electric Co., Ltd. ...

Page 3

... Write 4 Write 5 Write * Address format A14-A0 (Hex.) LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM To provide memory address. Address are internally latched during write cycle. To output data during read cycle and receive input data during write cycles. Data is internally latched during a write cycle. The outputs are in tri-state when high. ...

Page 4

... Notes for Software Product ID Command Code: 1. Command Code Address format: A14-A0 (Hex) 2. With A16-A1=0, SANYO Manufacture Code = BFH is read with A0=0 LE28CW1001D Device Code =07H is read with A0=1 3. The device does not remain in Software product ID Mode if powered down. LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM Product ID Entry Data AAH 55H ...

Page 5

... WE dose not switch from high to low after the last WE rising edge. The data in the page buffer can be rewritten in the next byte load cycle. LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM The page load period can continue indefinitely as long as host continues to load data into the device within the 100 s byte load cycle ...

Page 6

... Also, users systems can recognize the product number using software product identification mode. Figure 14 shows the flowchart for this operation. The manufacturer and device codes are the same in both modes. LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM SANYO Electric Co., Ltd. 6/16 ...

Page 7

... Output Low Voltage OL V Output High Voltage OH Power-up Timings Symbol tPU_READ Power-up to Read Operation tPU_WRITE Power-up to Write Operation V Capacitance at Ta=25 C, =2.7V CC Symbol C DQ Pin Capacitance DQ C Input Capacitance IN LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM Ratings Unit -0.5V 4.6V V -0. -0.5V + 0.5V CC -0.5V 14V 600 mW 0 +70 -65 +150 at Ta=0 to +70 C Min ...

Page 8

... CE Pulse Width tWP WE Pulse Width tDS Data Setup time tDH Data Hold time tBLC Byte Load Cycle Time tBLCO Byte Load Cycle Time-out LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM =2.7V 3.6V CC =100pF L LE28CW1001DT/DTS-15 LE28CW1001DT/DTS-20 Min. 150 Min. 0 100 120 120 100 0 ...

Page 9

... CE OE VIH WE High-Z DQ7-0 Figure 4: WE Controlled Page Write Cycle Timing Diagram tAS tAH A16-0 tCS CE tOES OE WE DQ7-0 LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM tRC tCE tOE tOLZ tOH tCLZ DATA VALID tCH tOEH tWP tBLC tDS tDH DATA VALID Byte 0 Byte 1 SANYO Electric Co ...

Page 10

... A16-0 CE tOES OE tCS WE DQ7-0 Figure 6: DATA Polling Timing Diagram A16 tBLCO CE tOEH OE DQ7 DIN=X LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM tCP tBLC tOEH tCH tDS tDH DATA VALID Byte 0 Byte 1 AN tWC tCE tOE DOUT=X SANYO Electric Co.,Ltd. tWC tBLCO ...

Page 11

... A16-0 5555 2AAA DQ7 tWP tBLC WE SW0 Note 1): The time between enabling Software Data Protect and the page load must be less than tBLCO LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM tWC+tBLCO tCE tOE 5555 SW1 SW2 Byte 0 Page load cycle starts SANYO Electric Co ...

Page 12

... CE OE tWP tBLC WE SW0 Figure 10: AC Input/Output Reference Waveform 2.4V AC drive level 0.4V The input rise and fall times (10% 90%) must not exceed 10ns. LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM Six-byte sequence for disabling Software Data Protection 5555 5555 2AAA SW1 SW2 ...

Page 13

... Preliminary Specifications Figure 11: Write Algorithm LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM Start Software Date Protect Enable Command Set Page Address Set Byte Address = 0 Load Byte Data Increment Byte address by 1 Byte No Address = 128 ? Yes Wait T BLCO Wait for end of Write (Twc, Toggle bit or ...

Page 14

... Preliminary Specifications Figure 12: Write Wait Options Internal Timer Page Write initiated Wait Twc Write complete LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM Toggle Bit Page write initiated Read a byte from page Read same byte No Does DQ6 match ? Yes Write complete SANYO Electric Co.,Ltd. ...

Page 15

... Write data: 55 Address: 2AAA Write data: A0 Address: 5555 Load 0 to 128 Bytes of page data Wait Twc SDP Enabled LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM Optional Page Load Operation SANYO Electric Co.,Ltd. Software Data Protect Disable Command Sequence Write data: AA Address: 5555 Write data: 55 ...

Page 16

... Preliminary Specifications Figure 14: Software Product Command Codes Software Product ID Entry LE28CW1001DT/DTS-15/20 1M-Bit Page Mode EEPROM Software Product ID Exit Command Sequence Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 80 Address: 5555 Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 60 ...

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