ATtiny2313 Atmel Corporation, ATtiny2313 Datasheet - Page 163

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ATtiny2313

Manufacturer Part Number
ATtiny2313
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of ATtiny2313

Flash (kbytes)
2 Kbytes
Pin Count
20
Max. Operating Frequency
20 MHz
Cpu
8-bit AVR
# Of Touch Channels
4
Hardware Qtouch Acquisition
No
Max I/o Pins
18
Ext Interrupts
18
Usb Speed
No
Usb Interface
No
Spi
2
Twi (i2c)
1
Uart
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Speed (ksps)
15
Analog Comparators
1
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
0.12
Eeprom (bytes)
128
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8 to 5.5
Operating Voltage (vcc)
1.8 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
2
Output Compare Channels
4
Input Capture Channels
1
Pwm Channels
4
32khz Rtc
No
Calibrated Rc Oscillator
Yes

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Serial
Programming Pin
Mapping
Parallel
Programming
Enter Programming
Mode
Considerations for
Efficient Programming
Chip Erase
2543L–AVR–08/10
Table 75. Pin Mapping Serial Programming
The following algorithm puts the device in Parallel programming mode:
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Ensure that V
4. Wait 20 - 60 µs, and apply 11.5 - 12.5V to RESET.
5. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
6. Wait at least 300 µs before giving any parallel programming commands.
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
If the rise time of the V
tive algorithm can be used.
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Monitor V
4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
5. Wait until V
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
0V.
applied to ensure the Prog_enable Signature has been latched.
to 0V.
applied to ensure the Prog_enable Signature has been latched.
commands.
The command needs only be loaded once when writing or reading multiple memory
locations.
Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase.
Address high byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
Symbol
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
MOSI
MISO
SCK
CC
, and as soon as V
CC
CC
actually reaches 4.5 -5.5V before giving any parallel programming
reaches at least 1.8V within the next 20 µs.
CC
is unable to fulfill the requirements listed above, the following alterna-
Pins
PB5
PB6
PB7
CC
CC
and GND.
Table 72 on page 162
and GND.
CC
Table 72 on page 162
reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.
(1)
memories plus Lock bits. The Lock bits are
I/O
O
I
I
to “0000”, RESET pin to 0V and V
to “0000”, RESET pin and V
Serial Data out
Serial Data in
Description
Serial Clock
CC
CC
to
163

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