Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable plastic package

BTA208S-600E

Manufacturer Part NumberBTA208S-600E
DescriptionPlanar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable plastic package
ManufacturerNXP Semiconductors
BTA208S-600E datasheet
 


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NXP Semiconductors
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
repetitive peak off-state voltage
DRM
I
RMS on-state current
T(RMS)
I
non-repetitive peak on-state
TSM
current
2
2
I
t
I
t for fusing
dI
/dt
rate of rise of on-state current
T
I
peak gate current
GM
V
peak gate voltage
GM
P
peak gate power
GM
P
average gate power
G(AV)
T
storage temperature
stg
T
junction temperature
j
10
I
T(RMS)
(A)
8
6
4
2
0
50
0
50
Fig 1.
RMS on-state current as a function of heatsink
temperature; maximum values
BTA208S-600E
Product data sheet
Conditions
≤ 102 °C;
full sine wave; T
mb
see
Figure
1; see
Figure
full sine wave; T
j(init)
t
= 20 ms; see
Figure
p
full sine wave; T
j(init)
t
= 16.7 ms
p
t
= 10 ms; sine-wave pulse
p
I
= 12 A; I
= 0.2 A; dI
T
G
over any 20 ms period
003aaf581
25
I
T(RMS)
(A)
102 C
20
15
10
100
150
T
( C)
mb
Fig 2.
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 13 April 2011
BTA208S-600E
Min
-
-
2; see
Figure 3
= 25 °C;
-
4; see
Figure 5
= 25 °C;
-
-
/dt = 0.2 A/µs
-
G
-
-
-
-
-40
-
5
0
2
1
10
10
1
surge duration (s)
RMS on-state current as a function of surge
duration; maximum value
3Q Hi-Com Triac
Max
Unit
600
V
8
A
65
A
72
A
2
21
A
s
100
A/µs
2
A
5
V
5
W
0.5
W
150
°C
125
°C
003aaf617
10
© NXP B.V. 2011. All rights reserved.
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