Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable plastic package

BTA208S-600E

Manufacturer Part NumberBTA208S-600E
DescriptionPlanar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable plastic package
ManufacturerNXP Semiconductors
BTA208S-600E datasheet
 


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NXP Semiconductors
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Static characteristics
I
gate trigger current
GT
I
latching current
L
I
holding current
H
V
on-state voltage
T
V
gate trigger voltage
GT
I
off-state current
D
Dynamic characteristics
dV
/dt
rate of rise of off-state
D
voltage
dI
/dt
rate of change of
com
commutating current
BTA208S-600E
Product data sheet
Conditions
V
= 12 V; I
= 0.1 A; T2+ G+;
D
T
T
= 25 °C; see
Figure 7
j
V
= 12 V; I
= 0.1 A; T2+ G-;
D
T
T
= 25 °C; see
Figure 7
j
V
= 12 V; I
= 0.1 A; T2- G-;
D
T
T
= 25 °C; see
Figure 7
j
V
= 12 V; I
= 0.1 A; T2+ G+;
D
G
T
= 25 °C; see
Figure 8
j
V
= 12 V; I
= 0.1 A; T2+ G-;
D
G
T
= 25 °C; see
Figure 8
j
V
= 12 V; I
= 0.1 A; T2- G-;
D
G
T
= 25 °C; see
Figure 8
j
V
= 12 V; T
= 25 °C; see
Figure 9
D
j
I
= 10 A; T
= 25 °C; see
Figure 10
T
j
V
= 12 V; I
= 0.1 A; T
= 25 °C;
D
T
j
see
Figure 11
V
= 400 V; I
= 0.1 A; T
= 125 °C;
D
T
j
see
Figure 11
V
= 600 V; T
= 125 °C
D
j
V
= 402 V; T
= 110 °C; exponential
DM
j
waveform; gate open circuit
V
= 400 V; T
= 125 °C; I
= 8 A;
D
j
T(RMS)
dV
/dt = 0.1 V/µs; gate open circuit
com
V
= 400 V; T
= 125 °C; I
= 8 A;
D
j
T(RMS)
dV
/dt = 10 V/µs; gate open circuit;
com
see
Figure 12
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 13 April 2011
BTA208S-600E
3Q Hi-Com Triac
Min
Typ
Max
Unit
-
-
10
mA
-
-
10
mA
-
-
10
mA
-
-
25
mA
-
-
25
mA
-
-
30
mA
-
-
25
mA
-
-
1.65
V
-
-
1.5
V
0.25
-
-
V
-
-
0.5
mA
60
-
-
V/µs
10
-
-
A/ms
5
-
-
A/ms
© NXP B.V. 2011. All rights reserved.
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