BT169G NXP Semiconductors, BT169G Datasheet

Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92) plastic package

BT169G

Manufacturer Part Number
BT169G
Description
Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
2. Pinning information
Table 1.
Pin
1
2
3
Discrete pinning
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Description
anode (a)
gate (g)
cathode (k)
Passivated, sensitive gate thyristors in a SOT54 plastic package.
BT169 series
Thyristors logic level
Rev. 5 — 30 September 2011
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
General purpose switching and phase control applications.
V
V
V
DRM
DRM
DRM
, V
, V
, V
RRM
RRM
RRM
 200 V (BT169B)
 400 V (BT169D)
 600 V (BT169G)
Simplified outline
SOT54 (TO-92)
I
I
I
T(RMS)
T(AV)
TSM
3
2
1
 8 A
 0.5 A
 0.8 A
Symbol
Product data sheet
A
sym037
G
K

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BT169G Summary of contents

Page 1

... V DRM 2. Pinning information Table 1. Discrete pinning Pin Description 1 anode (a) 2 gate (g) 3 cathode (k)  200 V (BT169B RRM  400 V (BT169D RRM  600 V (BT169G RRM Product data sheet  0.8 A  I T(RMS)  0.5 A  I T(AV)   I TSM Simplified outline Symbol 3 2 ...

Page 2

... BT169G 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter repetitive peak off-state voltages DRM RRM BT169B BT169D BT169G I average on-state current T(AV) I RMS on-state current T(RMS) I non-repetitive peak on-state current TSM ...

Page 3

... NXP Semiconductors 0.8 P tot (W) 0.6 0 form factor = I /I T(RMS) T(AV) Fig 1. Total power dissipation as a function of average on-state current; maximum values TSM ( Hz. Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values. ...

Page 4

... NXP Semiconductors TSM (  Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values T(RMS) (A) 1  83  Hz; T lead Fig 4. RMS on-state current as a function of surge duration for sinusoidal currents ...

Page 5

... NXP Semiconductors 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-lead) lead R thermal resistance from junction to th(j-a) ambient th(j-lead) (K/ Fig 6. Transient thermal impedance as a function of pulse width. BT169_SER Product data sheet Conditions printed-circuit board mounted; ...

Page 6

... NXP Semiconductors 6. Characteristics Table 5. Characteristics  unless otherwise stated. j Symbol Parameter Static characteristics I gate trigger current GT I latching current L I holding current H V on-state voltage T V gate trigger voltage off-state leakage D R current Dynamic characteristics dV /dt critical rate of rise of ...

Page 7

... NXP Semiconductors 1 GT(25 C) 1.2 0.8 0 Fig 7. Normalized gate trigger voltage as a function of junction temperature ( (1) (2) (3) 0 0.4 1 1.067 0.187  125 C; typical values. ( 125 C; maximum values. ( C; maximum values. ( Fig 9. ...

Page 8

... NXP Semiconductors H( k. GK Fig 11. Normalized holding current as a function of junction temperature. 7. Package information Epoxy meets requirements of UL94 V-0 at BT169_SER Product data sheet 001aab504 / 100 150 (1) R (2) Gate open circuit. ...

Page 9

... NXP Semiconductors 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 0.55 0.38 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION ...

Page 10

... Document ID Release date BT169_SERIES v.5 20110930 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. BT169_SERIES v.4 20040823 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • ...

Page 11

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 12

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 13

... NXP Semiconductors 12. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 5 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7 Package information . . . . . . . . . . . . . . . . . . . . . 8 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Legal information 10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 10 ...

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