CGD1042H NXP Semiconductors, CGD1042H Datasheet

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CGD1042H

Manufacturer Part Number
CGD1042H
Description
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of
24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
Table 1.
Bandwidth to 1000 MHz; V
[1]
Symbol
G
I
tot
p
CGD1042H
1 GHz, 23 dB gain high output power doubler
Rev. 3 — 28 September 2010
High output power capability
Excellent linearity
Extremely low noise
Excellent return loss properties
Rugged construction
Unconditionally stable
Thermal optimized design
CATV systems operating in the 40 MHz to 1000 MHz frequency range
Direct Current (DC).
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Parameter
power gain
total current
Quick reference data
B
= 24 V (DC); T
mb
Conditions
f = 45 MHz
f = 1000 MHz
= 35
C; unless otherwise specified.
[1]
Min
-
22.0
430
Typ
21.5
23.0
450
Product data sheet
-
24.0
Max
470
Unit
dB
dB
mA

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CGD1042H Summary of contents

Page 1

... CGD1042H 1 GHz gain high output power doubler Rev. 3 — 28 September 2010 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...

Page 2

... Parameter Conditions supply voltage RF input voltage single tone storage temperature mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 September 2010 CGD1042H 1 GHz gain high output power doubler Simplified outline Graphic symbol Min - - 40  ...

Page 3

... MHz to 200 MHz f = 200 MHz to 550 MHz f = 550 MHz to 870 MHz f = 870 MHz to 914 MHz f = 914 MHz to 1000 MHz MHz to 1000 MHz All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 September 2010 CGD1042H Min Typ Max Unit - 21 ...

Page 4

... max. min. max. 2.04 4.15 2.4 38.1 25.4 10.2 4.2 44.75 13.75 2.54 5.08 12.7 8.8 2.54 3.85 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 September 2010 CGD1042H 1 GHz gain high output power doubler ...

Page 5

... Product data sheet Product data sheet Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 September 2010 CGD1042H 1 GHz gain high output power doubler Change notice - - - Supersedes CGD1042H v.2 CGD1042H v.1 - © NXP B.V. 2010. All rights reserved ...

Page 6

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 September 2010 CGD1042H © NXP B.V. 2010. All rights reserved ...

Page 7

... NXP Semiconductors’ product specifications. 9.4 Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 September 2010 CGD1042H Trademarks © NXP B.V. 2010. All rights reserved ...

Page 8

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com CGD1042H All rights reserved. Date of release: 28 September 2010 Document identifier: CGD1042H ...

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