CGD987HCI NXP Semiconductors, CGD987HCI Datasheet

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CGD987HCI

Manufacturer Part Number
CGD987HCI
Description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
Table 1.
Bandwidth 40 MHz to 1003 MHz; V
specified.
[1]
[2]
Symbol Parameter
G
CSO
I
CTB
tot
p
CGD987HCI
1 GHz, 27 dB gain GaAs high output power doubler
Rev. 1 — 29 June 2011
Excellent linearity
Optimized for flat PAL D and flat NTSC loading
Superior levels of ESD protection
Extremely low noise
Excellent return loss properties
Gain compensation over temperature
Rugged construction
Unconditionally stable
Thermally optimized design
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Integrated ring wave surge protection
CATV systems operating in the 40 MHz to 862 MHz / 1003 MHz frequency range
using PAL D or NTSC channel conditions.
98 PAL D channels with 8 MHz bandwidth per channel; [f = 47 MHz to 862 MHz]; flat V
Direct Current (DC).
power gain
composite triple beat
composite second-order
distortion
total current
Quick reference data
B
= 24 V (DC); Z
Conditions
f = 50 MHz
f = 1003 MHz
V
V
o
o
= 48 dBmV at 862 MHz
= 48 dBmV at 862 MHz
S
= Z
L
= 75
; T
mb
= 35
[1]
[1]
[2]
Product data sheet
Min Typ Max Unit
-
26
-
-
-
C; unless otherwise
25.5 -
27
66
66
440
o
till 862 MHz.
28
62
60
460
dB
dB
dBc
dBc
mA

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CGD987HCI Summary of contents

Page 1

... CGD987HCI 1 GHz gain GaAs high output power doubler Rev. 1 — 29 June 2011 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. 1.2 Features and benefits  ...

Page 2

... Limiting values supply voltage RF input voltage electrostatic discharge voltage storage temperature mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 June 2011 CGD987HCI Simplified outline Graphic symbol Conditions single tone [1] Human Body Model (HBM); ...

Page 3

... MHz to 160 MHz f = 160 MHz to 320 MHz f = 320 MHz to 640 MHz f = 640 MHz to 870 MHz f = 870 MHz to 1003 MHz MHz f = 1003 MHz All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 June 2011 CGD987HCI  unless otherwise specified. Min - - 26 [1] ...

Page 4

... MHz 56.4 dBmV at 1003 MHz o = 56.4 dBmV at 1003 MHz 56.4 dBmV at 1003 MHz 56.4 dBmV at 1003 MHz o till 750 MHz. o All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 June 2011 CGD987HCI  unless otherwise specified. Min [1] - [1] - [1] - [1] - [1] - [1] - ...

Page 5

... max. min. max. 2.04 4.15 2.4 38.1 25.4 10.2 4.2 44.75 13.75 2.54 5.08 12.7 8.8 2.54 3.85 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 June 2011 CGD987HCI ...

Page 6

... ESD GaAs NTSC PAL RF UNC 8. Revision history Table 8. Revision history Document ID Release date CGD987HCI v.1 20110629 CGD987HCI Product data sheet 1 GHz gain GaAs high output power doubler Abbreviations Description Community Antenna TeleVision ElectroStatic Discharge Gallium-Arsenide National Television Standard Committee Phase Alternate Line ...

Page 7

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 June 2011 CGD987HCI © NXP B.V. 2011. All rights reserved ...

Page 8

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 June 2011 CGD987HCI Trademarks © NXP B.V. 2011. All rights reserved ...

Page 9

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 29 June 2011 Document identifier: CGD987HCI ...

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