High-voltage switching diodes, encapsulated in a SOT23 small Surface-MountedDevice (SMD) plastic package

 

BAS101_BAS101S

Manufacturer Part NumberBAS101_BAS101S
DescriptionHigh-voltage switching diodes, encapsulated in a SOT23 small Surface-MountedDevice (SMD) plastic package
ManufacturerNXP Semiconductors
BAS101_BAS101S datasheets

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NXP Semiconductors
500
I
F
(mA)
400
300
200
(1)
(2)
100
0
0
0.5
= 150 °C
(1) T
amb
= 75 °C
(2) T
amb
= 25 °C
(3) T
amb
Fig 1.
Forward current as a function of forward
voltage; typical values
2
10
I
R
(μA)
10
1
−1
10
−2
10
0
40
80
120
V
= 300 V
R
Fig 3.
Reverse current as a function of junction
temperature; typical values
BAS101_BAS101S_2
Product data sheet
mhc618
2
10
I
FSM
(A)
10
1
(3)
−1
10
1
1
1.5
V
(V)
F
Based on square wave currents
T
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
mhc619
0.42
C
d
(pF)
0.38
0.34
0.3
160
200
0
T
(°C)
j
f = 1 MHz; T
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
Rev. 02 — 14 December 2009
BAS101; BAS101S
High-voltage switching diodes
mbg703
2
3
10
10
10
t
(μs)
p
= 25 °C; prior to surge
j
mhc621
10
20
30
V
(V)
R
= 25 °C
amb
© NXP B.V. 2009. All rights reserved.
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