BAS116 NXP Semiconductors, BAS116 Datasheet - Page 3

• Manufacturer Part Number: BAS116
• Description: Epitaxial medium-speed switching diode with a lowleakage current in a small SOT23 plastic SMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12
V
I
C
t
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C unless otherwise specified.
F
Low-leakage diode
d
th(j-tp)
th(j-a)
forward voltage
reverse current
diode capacitance
reverse recovery time
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
R
L
I
I
I
I
V
V
F
F
F
F
= 100 Ω; measured at I
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 75 V
= 75 V; T
R
= 0; see Fig.6
j
note 1
3
= 150 °C
CONDITIONS
F
CONDITIONS
= 10 mA to I
R
= 1 mA; see Fig.7
R
= 10 mA;
VALUE
330
500
−
−
−
−
0.003 5
3
2
0.8
TYP.
Product data sheet
BAS116
0.9
1
1 .1
1. 25
80
−
3
MAX. UNIT
UNIT
K/W
K/W
V
V
V
V
nA
nA
pF
µs