BAS116 NXP Semiconductors, BAS116 Datasheet - Page 5

• Manufacturer Part Number: BAS116
• Description: Epitaxial medium-speed switching diode with a lowleakage current in a small SOT23 plastic SMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2003 Dec 12
handbook, full pagewidth
Low-leakage diode
(1) Maximum values.
(2) Typical values.
V
Fig.5
(1) I
R
V = V
= 75 V.
(nA)
I
10
10
10
R
R
10
R = 50
10
= 1 mA.
−1
−2
−3
S
1
R
2
Reverse current as a function of junction
temperature.
0
I x R
F
Ω
S
(1)
(2)
50
I F
100
D.U.T.
Fig.7 Reverse recovery time test circuit and waveforms.
150
OSCILLOSCOPE
T
SAMPLING
R = 50
j
MGA881
(°C)
i
mlb754
200
Ω
V R
5
handbook, halfpage
10%
t r
f = 1 MHz; T
Fig.6
90%
(pF)
C d
input signal
2
1
0
0
t p
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
5
t
10
I F
output signal
15
Product data sheet
V R (V)
t rr
BAS116
MBG526
20
(1)
t