BAS116H NXP Semiconductors, BAS116H Datasheet

Low leakage switching diode, encapsulated in a SOD123F small and flat leadSurface-Mounted Device (SMD) plastic package

BAS116H

Manufacturer Part Number
BAS116H
Description
Low leakage switching diode, encapsulated in a SOD123F small and flat leadSurface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
2. Pinning information
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Low leakage switching diode, encapsulated in a SOD123F small and flat lead
Surface-Mounted Device (SMD) plastic package.
Table 1.
[1]
[2]
[3]
Table 2.
[1]
Symbol
I
I
V
t
Pin
1
2
F
R
rr
R
BAS116H
Low leakage switching diode
Rev. 3 — 31 May 2011
Small and flat lead SMD plastic package
Low leakage current
Excellent coplanarity and improved thermal behavior
AEC-Q101 qualified
General-purpose switching
Pulse test: t
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
When switched from I
The marking bar indicates the cathode.
Quick reference data
Pinning
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
p
cathode
anode
Description
 300 s;   0.02.
F
= 10 mA to I
R
= 10 mA; R
V
Conditions
R
= 75 V
L
= 100 ; measured at I
[1]
Simplified outline
[1][2]
1
[3]
Min
-
-
-
-
R
2
= 1 mA.
Typ
-
0.003
-
0.8
Product data sheet
Graphic symbol
Max
215
5.0
75
3.0
1
sym001
2
nA
V
Unit
mA
s

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BAS116H Summary of contents

Page 1

... BAS116H Low leakage switching diode Rev. 3 — 31 May 2011 1. Product profile 1.1 General description Low leakage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits  Small and flat lead SMD plastic package  ...

Page 2

... T junction temperature ambient temperature storage temperature  300 s;   0.02. p All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 May 2011 BAS116H Low leakage switching diode Marking code B1 Min - - [1][ [  ...

Page 3

... diode capacitance MHz R reverse recovery time  300 s;   0.02 mA All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 May 2011 BAS116H Low leakage switching diode Min Typ [1][ [ Min Typ [ ...

Page 4

... Non-repetitive peak forward current as a function of pulse duration; maximum values (pF  MHz T amb Diode capacitance as a function of reverse voltage; typical values BAS116H mbg704 (μs) p mbg526 (V) R © NXP B.V. 2011. All rights reserved. ...

Page 5

... All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 May 2011 Low leakage switching diode input signal output signal 1.7 1.2 1.5 1.0 1 0.55 0.35 2 0.25 0.10 04-11-29 [1] Packing quantity 3000 -115 Section 14. BAS116H (1) 10000 -135 © NXP B.V. 2011. All rights reserved ...

Page 6

... Product data sheet 4.4 2.9 2.8 2.1 1.6 1.1 (2×) 1.2 (2×) solder land plus solder paste solder resist Dimensions in mm All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 May 2011 BAS116H Low leakage switching diode SOD123F 1.1 1.2 (2×) (2×) sod123f_fr © NXP B.V. 2011. All rights reserved ...

Page 7

... Product data sheet Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 May 2011 BAS116H Low leakage switching diode Change notice Supersedes - BAS116H v.2 - BAS116H v © NXP B.V. 2011. All rights reserved ...

Page 8

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 May 2011 BAS116H Low leakage switching diode © NXP B.V. 2011. All rights reserved ...

Page 9

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 May 2011 BAS116H Low leakage switching diode © NXP B.V. 2011. All rights reserved ...

Page 10

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BAS116H All rights reserved. Date of release: 31 May 2011 Document identifier: BAS116H ...

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