BAS116H NXP Semiconductors, BAS116H Datasheet - Page 3

• Manufacturer Part Number: BAS116H
• Description: Low leakage switching diode, encapsulated in a SOD123F small and flat leadSurface-Mounted Device (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAS116H
Product data sheet
Table 6.
[1]
[2]
[3]
Table 7.
T
[1]
[2]
Symbol
R
R
Symbol
V
I
C
t
R
rr
amb
F
th(j-a)
th(j-sp)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Soldering point of cathode tab.
Pulse test: t
When switched from I
= 25

C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
p
 300 s;   0.02.
All information provided in this document is subject to legal disclaimers.
F
= 10 mA to I
Rev. 3 — 31 May 2011
Conditions
I
I
I
I
V
V
V
R
F
F
F
F
R
R
R
= 10 mA; R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 75 V
= 75 V; T
= 0 V; f = 1 MHz
Conditions
in free air
L
j
= 150 C
= 100 ; measured at I
[1]
[2]
[1][2]
Low leakage switching diode
Min
-
-
-
-
-
-
-
-
[3]
Min
-
-
R
= 1 mA.
Typ
-
-
-
0.003
3
2
0.8
-
Typ
-
-
BAS116H
© NXP B.V. 2011. All rights reserved.
Max
0.90
1.00
1.10
1.25
5.0
80.0
-
3.0
Max
330
70
V
V
nA
Unit
V
V
nA
pF
s
Unit
K/W
K/W
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