BAS116T NXP Semiconductors, BAS116T Datasheet

Single low leakage current switching diode, encapsulated in a SOT416 (SC-75)ultra small Surface-Mounted Device (SMD) plastic package

BAS116T

Manufacturer Part Number
BAS116T
Description
Single low leakage current switching diode, encapsulated in a SOT416 (SC-75)ultra small Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Single low leakage current switching diode, encapsulated in a SOT416 (SC-75)
ultra small Surface-Mounted Device (SMD) plastic package.
Table 1.
[1]
[2]
Symbol
I
I
V
t
F
R
rr
R
BAS116T
Single low leakage current switching diode
Rev. 01 — 14 December 2009
High switching speed: t
Low leakage current: 3 pA
Repetitive peak reverse voltage:
V
AEC-Q101 qualified
Low leakage current applications
General-purpose switching
Pulse test: t
When switched from I
RRM
≤ 85 V
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
p
≤ 300 μs; δ ≤ 0.02.
F
= 10 mA to I
rr
= 0.8 μs
R
= 10 mA; R
Conditions
V
R
= 75 V
L
= 100 Ω; measured at I
Low capacitance: C
Reverse voltage: V
Ultra small SMD plastic package
Voltage clamping
Reverse polarity protection
[1]
[2]
Min
-
-
-
-
R
= 1 mA.
Typ
-
-
-
-
Product data sheet
R
d
≤ 75 V
= 2 pF
Max
215
5
75
3
Unit
mA
nA
V
μs

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BAS116T Summary of contents

Page 1

... BAS116T Single low leakage current switching diode Rev. 01 — 14 December 2009 1. Product profile 1.1 General description Single low leakage current switching diode, encapsulated in a SOT416 (SC-75) ultra small Surface-Mounted Device (SMD) plastic package. 1.2 Features High switching speed: t Low leakage current Repetitive peak reverse voltage: ≤ ...

Page 2

... Rev. 01 — 14 December 2009 BAS116T Single low leakage current switching diode Simplified outline Graphic symbol Marking code ZY Min Max - [1] ...

Page 3

... reverse recovery time diode capacitance MHz R ≤ 300 μs; δ ≤ 0.02 mA Rev. 01 — 14 December 2009 BAS116T Single low leakage current switching diode Min Max [3] - 150 - 150 −55 +150 −65 +150 Min Typ [1] ...

Page 4

... T (2) T (3) T Fig FSM ( − Rev. 01 — 14 December 2009 BAS116T Single low leakage current switching diode mlb752 (1) (2) (3) 0 0.4 0.8 1 150 °C; typical values amb = 25 °C; typical values amb = 25 °C; maximum values amb Forward current as a function of forward ...

Page 5

... Single low leakage current switching diode mlb754 (pF 150 200 T (° MHz; T Fig 5. Diode capacitance as a function of reverse voltage; typical values Rev. 01 — 14 December 2009 BAS116T mbg526 ( °C amb © NXP B.V. 2009. All rights reserved ...

Page 6

... Product data sheet Single low leakage current switching diode SAMPLING OSCILLOSCOPE Ω mga881 input signal 1.8 1.4 3 1.75 0.9 1.45 0 Dimensions in mm Rev. 01 — 14 December 2009 BAS116T (1) output signal 0.95 0.60 0.45 0.15 0.30 0.25 0.15 0.10 04-11-04 © NXP B.V. 2009. All rights reserved ...

Page 7

... Reflow soldering footprint SOT416 (SC-75) BAS116T_1 Product data sheet Packing methods SOT416 4 mm pitch tape and reel 2.2 1.7 0.85 0.6 (3×) 1.3 Rev. 01 — 14 December 2009 BAS116T Single low leakage current switching diode [1] Packing quantity 3000 -115 Section 14. solder lands solder resist 1 2 solder paste 0.5 (3× ...

Page 8

... Revision history Table 9. Revision history Document ID Release date BAS116T_1 20091214 BAS116T_1 Product data sheet Single low leakage current switching diode Data sheet status Change notice Product data sheet - Rev. 01 — 14 December 2009 BAS116T Supersedes - © NXP B.V. 2009. All rights reserved ...

Page 9

... Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 14 December 2009 BAS116T © NXP B.V. 2009. All rights reserved ...

Page 10

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 December 2009 BAS116T All rights reserved. Document identifier: BAS116T_1 ...

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