General purpose switching diodes fabricated in planartechnology, and encapsulated in small rectangular plasticSMD SOT23 packages

BAS29_31_35

Manufacturer Part NumberBAS29_31_35
DescriptionGeneral purpose switching diodes fabricated in planartechnology, and encapsulated in small rectangular plasticSMD SOT23 packages
ManufacturerNXP Semiconductors
BAS29_31_35 datasheet
 


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DATA SHEET
dbook, halfpage
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
Product data sheet
Supersedes data of 2001 Oct 10
DISCRETE SEMICONDUCTORS
M3D088
2003 Mar 20

BAS29_31_35 Summary of contents

  • Page 1

    DATA SHEET dbook, halfpage BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product data sheet Supersedes data of 2001 Oct 10 DISCRETE SEMICONDUCTORS M3D088 2003 Mar 20 ...

  • Page 2

    ... NXP Semiconductors General purpose controlled avalanche (double) diodes FEATURES • Small plastic SMD package • Switching speed: max • General application • Continuous reverse voltage: max • Repetitive peak reverse voltage: max. 110 V • Repetitive peak forward current: max. 600 mA • ...

  • Page 3

    ... NXP Semiconductors General purpose controlled avalanche (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per diode V repetitive peak reverse voltage RRM V continuous reverse voltage R I continuous forward current F I repetitive peak forward current FRM ...

  • Page 4

    ... NXP Semiconductors General purpose controlled avalanche (double) diodes ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER Per diode V forward voltage F I reverse current R V reverse avalanche breakdown (BR)R voltage C diode capacitance d t reverse recovery time rr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to tie-point ...

  • Page 5

    ... NXP Semiconductors General purpose controlled avalanche (double) diodes GRAPHICAL DATA 300 handbook, halfpage I F (mA) (1) 200 100 ( 100 Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. ...

  • Page 6

    ... NXP Semiconductors General purpose controlled avalanche (double) diodes 2 10 handbook, halfpage I R (µA) 10 (1) (2) 1 −1 10 − 100 ( maximum values typical values. R Fig.5 Reverse current as a function of junction temperature. handbook, full pagewidth D.U. Ω ...

  • Page 7

    ... NXP Semiconductors General purpose controlled avalanche (double) diodes PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2003 Mar scale ...

  • Page 8

    ... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

  • Page 9

    ... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...