BAS29_31_35 NXP Semiconductors, BAS29_31_35 Datasheet - Page 2

• Manufacturer Part Number: BAS29_31_35
• Description: General purpose switching diodes fabricated in planartechnology, and encapsulated in small rectangular plasticSMD SOT23 packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 90 V
• Repetitive peak reverse voltage: max. 110 V
• Repetitive peak forward current: max. 600 mA
• Repetitive peak reverse current: max. 600 mA.
APPLICATIONS
• General purpose switching in e.g. surface mounted
DESCRIPTION
General purpose switching diodes fabricated in planar
technology, and encapsulated in small rectangular plastic
SMD SOT23 packages. The BAS29 consists of a single
diode. The BAS31 has two diodes in series. The BAS35
has two diodes with a common anode.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
2003 Mar 20
BAS29
BAS31
BAS35
circuits.
General purpose controlled avalanche
(double) diodes
∗ = t : Made in Malaysia.
∗ = W : Made in China.
TYPE NUMBER
MARKING CODE
L20 or ∗A8
L21 or ∗V1
L22 or ∗V2
(1)
2
PINNING
handbook, halfpage
PIN
1
2
3
a. Simplified outline.
b. BAS29 diode.
n.c.
Fig.1 Simplified outline (SOT23) and symbols.
2
anode
not connected cathode
cathode
2
BAS29
3
BAS29; BAS31; BAS35
3
1
DESCRIPTION
anode
common
connection
1
BAS31
2
2
c. BAS31 diode.
d. BAS35 diode.
Product data sheet
cathode (k1)
cathode (k2)
common
anode
3
3
BAS35
MAM233
1
1