BAS29_31_35 NXP Semiconductors, BAS29_31_35 Datasheet - Page 3

• Manufacturer Part Number: BAS29_31_35
• Description: General purpose switching diodes fabricated in planartechnology, and encapsulated in small rectangular plasticSMD SOT23 packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
Per diode
V
V
I
I
I
P
I
E
T
T
SYMBOL
F
FRM
FSM
RRM
stg
j
RRM
R
tot
RRM
General purpose controlled avalanche
(double) diodes
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
repetitive peak reverse current
repetitive peak reverse energy
storage temperature
junction temperature
PARAMETER
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
square wave; T
surge; see Fig.4
T
t
p
amb
≥ 50 µs; f ≤ 20 Hz; T
t = 1 µs
t = 100 µs
t = 1 s
= 25 °C; note 1
3
CONDITIONS
j
= 25 °C prior to
j
= 25 °C
BAS29; BAS31; BAS35
−
−
−
−
−
−
−
−
−
−
−
−65
−
MIN.
110
90
250
150
600
10
4
0.75
250
600
5
+150
150
Product data sheet
MAX.
V
V
mA
mA
mA
A
A
A
mW
mA
mJ
°C
°C
UNIT