BAS29_31_35 NXP Semiconductors, BAS29_31_35 Datasheet - Page 4

• Manufacturer Part Number: BAS29_31_35
• Description: General purpose switching diodes fabricated in planartechnology, and encapsulated in small rectangular plasticSMD SOT23 packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
Per diode
V
I
V
C
t
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C unless otherwise specified.
F
(BR)R
General purpose controlled avalanche
(double) diodes
d
th j-tp
th j-a
forward voltage
reverse current
reverse avalanche breakdown
voltage
diode capacitance
reverse recovery time
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
I
f = 1 MHz; V
when switched from I
I
at I
R
R
I
I
I
I
I
V
V
= 1 mA
= 30 mA; R
F
F
F
F
F
R
R
R
= 10 mA
= 50 mA
= 100 mA
= 200 mA
= 400 mA
= 3 mA; see Fig.7
= 90 V
= 90 V; T
note 1
4
CONDITIONS
R
L
= 0; see Fig.6
j
= 100 Ω; measured
= 150 °C
CONDITIONS
F
= 30 mA to
BAS29; BAS31; BAS35
−
−
−
−
−
−
−
120
−
−
MIN.
750
840
900
1
1.25
100
100
170
35
50
VALUE
Product data sheet
MAX.
360
500
mV
mV
mV
V
V
nA
µA
V
pF
ns
UNIT
UNIT
K/W
K/W