PESD5V0S2BT NXP Semiconductors, PESD5V0S2BT Datasheet

Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed toprotect two data lines from the damage caused by ESD and other transients

PESD5V0S2BT

Manufacturer Part Number
PESD5V0S2BT
Description
Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed toprotect two data lines from the damage caused by ESD and other transients
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a
small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to
protect two data lines from the damage caused by ESD and other transients.
I
I
I
I
I
I
I
I
I
I
I
I
I
Table 1.
T
Symbol
V
C
amb
RWM
d
PESD5V0S2BT
Low capacitance bidirectional double ESD protection diode
Rev. 03 — 9 February 2009
Bidirectional ESD protection of two lines
Low diode capacitance
Max. peak pulse power: P
Low clamping voltage: V
Ultra low leakage current: I
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
Cellular handsets and accessories
Portable electronics
Computers and peripherals
Communication systems
Audio and video equipment
= 25 C unless otherwise specified.
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
PP
CL
PP
RM
= 14 V at I
= 12 A at t
= 130 W at t
= 5 nA at V
Conditions
f = 1 MHz;
V
R
= 0 V
PP
p
= 8/20 s
= 12 A
p
RWM
= 8/20 s
= 5 V
Min
-
-
Typ
-
35
Product data sheet
Max
5
45
Unit
V
pF

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PESD5V0S2BT Summary of contents

Page 1

... PESD5V0S2BT Low capacitance bidirectional double ESD protection diode Rev. 03 — 9 February 2009 1. Product profile 1.1 General description Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two data lines from the damage caused by ESD and other transients. ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PESD5V0S2BT - 4. Marking Table 4. Type number PESD5V0S2BT [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). ...

Page 3

... Conditions electrostatic discharge IEC 61000-4-2 voltage (contact discharge) MIL-STD-883 (human body model) ESD standards compliance 001aaa630 Fig 2. Rev. 03 — 9 February 2009 PESD5V0S2BT Min [1][ Conditions > (air); > (contact) > 100 % 0 ...

Page 4

... PP breakdown voltage differential resistance diode capacitance MHz; V 001aaa632 1 PP(25 C) 0.8 0 Fig 4. Rev. 03 — 9 February 2009 PESD5V0S2BT Min Typ - - = [1][ [1][ 5 100 150 Relative variation of peak pulse power as a function of junction temperature; typical values © ...

Page 5

... PESD5V0S2BT_3 Product data sheet Low capacitance bidirectional double ESD protection diode 001aaa634 R( (V) R Fig 6. Rev. 03 — 9 February 2009 PESD5V0S2BT 100 125 I < measured amb Relative variation of reverse current as a function of junction temperature; typical ...

Page 6

... PESD5V0S2BT vertical scale = 200 V/div horizontal scale = 50 ns/div GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div Rev. 03 — 9 February 2009 PESD5V0S2BT 4 GHz DIGITAL OSCILLOSCOPE 10 ATTENUATOR vertical scale = 10 V/div horizontal scale = 50 ns/div clamped 1 kV ESD voltage waveform (IEC61000-4-2 network) vertical scale = 10 V/div ...

Page 7

... The PESD5V0S2BT is designed for the bidirectional protection of two lines from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESD5V0S2BT may be used on lines where the signal polarities are both, positive and negative with respect to ground. The PESD5V0S2BT provides a surge capability of 130 W per line for an 8/20 s waveform ...

Page 8

... Product data sheet Low capacitance bidirectional double ESD protection diode 3.0 2.8 2.5 1.4 2.1 1.2 1 1.9 Dimensions in mm Package outline SOT23 (TO-236AB) Packing methods Package Description SOT23 4 mm pitch tape and reel Rev. 03 — 9 February 2009 PESD5V0S2BT 1.1 0.9 3 0.45 0.15 2 0.48 0.15 0.38 0.09 04-11-04 [1] Packing quantity 3000 -215 Section 13. © NXP B.V. 2009. All rights reserved. ...

Page 9

... Low capacitance bidirectional double ESD protection diode 3.3 2.9 1 2 1.4 2.8 4.5 Rev. 03 — 9 February 2009 PESD5V0S2BT solder lands solder resist 2 solder paste occupied area 0 Dimensions in mm solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering © NXP B.V. 2009. All rights reserved. sot023_fr sot023_fw ...

Page 10

... Product data sheet Product data sheet Rev. 03 — 9 February 2009 PESD5V0S2BT Change notice Supersedes - PESD5V0S2BT_2 electrostatic discharge ESD CL - PESD5V0S2BT_1 - - © NXP B.V. 2009. All rights reserved ...

Page 11

... Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 9 February 2009 PESD5V0S2BT © NXP B.V. 2009. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PESD5V0S2BT All rights reserved. Date of release: 9 February 2009 Document identifier: PESD5V0S2BT_3 ...

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