2N7002BKS NXP Semiconductors, 2N7002BKS Datasheet
2N7002BKS
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2N7002BKS Summary of contents
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... V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching ...
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... T amb = 25 °C gate-source voltage T amb drain current amb T amb All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Simplified outline Graphic symbol [1] Marking code ZT* Min - - [ ° ...
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... T amb junction temperature ambient temperature storage temperature 017aaa001 75 125 175 T (°C) amb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Min = 25 °C; - ≤ 10 μ °C [ °C [1] - ...
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... All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET 10 V (V) DS Min Typ [1] - ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002BKS Product data sheet 60 V, 300 mA dual N-channel Trench MOSFET − − All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS 017aaa057 (s) p 017aaa058 ...
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... R G fall time source-drain voltage I S ≤ 300 μs; δ ≤ 0.01. p All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Min = 10 μ 250 μ 1 ...
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... V 3.0 4.0 V (V) DS Fig 7. 017aaa041 R (2) (3) (4) (5) 0.6 0.8 1.0 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET − (A) −4 10 (1) (2) (3) −5 10 −6 10 0.0 1.0 2 ° amb ...
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... V (V) GS Fig 11. Normalized drain-source on-state resistance 017aaa045 120 180 T (°C) amb Fig 13. Input, output and reverse transfer All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET 2.4 a 1.8 1.2 0.6 0.0 − DSon a = ----------------------------- ...
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... Q (nC °C amb Fig 15. Gate charge waveform definitions 1 (A) 0.8 (1) 0.4 0.0 0.0 0.4 All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) ...
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... Fig 17. Duty cycle definition 2N7002BKS Product data sheet 60 V, 300 mA dual N-channel Trench MOSFET P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS 006aaa812 © NXP B.V. 2010. All rights reserved ...
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... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-88 All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION ...
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... All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET 0.4 (2×) 0.6 (2×) Dimensions in mm 1.5 0.3 2.5 1.5 solder lands solder resist solder paste occupied area sot363_fr solder lands solder resist occupied area ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date 2N7002BKS v.2 20100923 • Modifications: Table 2 2N7002BKS v.1 20100617 2N7002BKS Product data sheet 60 V, 300 mA dual N-channel Trench MOSFET Data sheet status Product data sheet “Pinning”: graphic symbol amended Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS © NXP B.V. 2010. All rights reserved ...
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... V, 300 mA dual N-channel Trench MOSFET 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 2N7002BKS © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 23 September 2010 Document identifier: 2N7002BKS ...