BSS138PW NXP Semiconductors, BSS138PW Datasheet - Page 6

• Manufacturer Part Number: BSS138PW
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
BSS138PW
Product data sheet
Table 7.
T
[1]
Symbol
Static characteristics
V
V
I
I
R
g
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
= 25
Pulse test: t
°
C unless otherwise specified.
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
forward
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
p
≤ 300 μs; δ ≤ 0.01.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
Conditions
I
I
V
V
V
V
V
I
V
V
V
f = 1 MHz
V
R
V
R
I
D
D
D
S
DS
GS
GS
GS
DS
DS
GS
GS
DS
GS
L
G
T
T
= 115 mA; V
= 10 μA; V
= 250 μA; V
= 300 mA;
= 250 Ω;
= 6 Ω
j
j
= 60 V; V
= 10 V; I
= 30 V;
= 50 V;
= 25 °C
= 150 °C
= ±20 V; V
= 5 V; I
= 10 V; I
= 4.5 V
= 0 V; V
= 10 V;
60 V, 320 mA N-channel Trench MOSFET
D
DS
D
D
GS
= 50 mA
GS
DS
= 300 mA
= 200 mA
GS
DS
= 10 V;
= 0 V
= 0 V
= V
= 0 V
= 0 V
GS
[1]
[1]
Min
60
0.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.47
BSS138PW
Typ
-
1.2
-
-
-
1
0.9
700
0.72
0.14
0.24
38
7
4
2
3
9
4
0.75
© NXP B.V. 2010. All rights reserved.
Max
-
1.5
1
10
100
2
1.6
-
0.8
-
-
50
-
-
6
-
20
-
1.1
Unit
V
V
μA
μA
nA
Ω
Ω
mS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
6 of 16