BUK754R0-55B NXP Semiconductors, BUK754R0-55B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology

BUK754R0-55B

Manufacturer Part Number
BUK754R0-55B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK754R0-55B
Manufacturer:
NXP
Quantity:
30 000
Part Number:
BUK754R0-55B
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK754R0-55B
N-channel TrenchMOS standard level FET
Rev. 5 — 22 April 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive systems
Quick reference data
Parameter
drain-source voltage T
drain current
total power
dissipation
drain-source
on-state resistance
Conditions
V
see
T
V
T
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
1; see
j
D
≤ 175 °C
mb
= 25 A;
Figure
= 25 °C;
Figure 2
Figure 4
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
7;
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
3.4
Max Unit
55
75
300
4
V
A
W
mΩ

Related parts for BUK754R0-55B

BUK754R0-55B Summary of contents

Page 1

... BUK754R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK754R0-55B N-channel TrenchMOS standard level FET Min Typ ≤ sup = ...

Page 3

... T pulsed ° ≤ sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK754R0-55B Min Max - -20 20 [1] Figure [2][3] - 193 [1] Figure 1 - ...

Page 4

... All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK754R0-55B N-channel TrenchMOS standard level FET 100 150 Normalized total power dissipation as a function of mounting base temperature 003aab677 (1) (2) ( ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK754R0-55B Product data sheet = (1) 1 Conditions see Figure 5 vertical in still air - All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK754R0-55B N-channel TrenchMOS standard level FET (V) DS Min Typ - - - ...

Page 6

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK754R0-55B Min Typ Max Unit 4 ...

Page 7

... V (V) DS Fig 7. 03aa35 typ max (V) GS Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK754R0-55B N-channel TrenchMOS standard level FET 7 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 120 g fs ...

Page 8

... Fig 11. Gate-source threshold voltage as a function of 03ne89 V GS (V) 120 180 ( ° Fig 13. Gate-source voltage as a function of turn-on All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK754R0-55B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 −60 0 ...

Page 9

... C iss C oss C rss (V) DS Fig 15. Reverse diode current as a function of reverse All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK754R0-55B N-channel TrenchMOS standard level FET 175 ° 0.0 0.2 0.4 0.6 diode voltage; typical values 03nh17 = 25 ° ...

Page 10

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK754R0-55B N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK754R0-55B separated from data sheet BUK75_764R0-55B_4. BUK75_764R0-55B_4 20071004 BUK754R0-55B Product data sheet ...

Page 12

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK754R0-55B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK754R0-55B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 22 April 2011 Document identifier: BUK754R0-55B ...

Related keywords