BUK7E07-55B NXP Semiconductors, BUK7E07-55B Datasheet
BUK7E07-55B
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BUK7E07-55B Summary of contents
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... BUK7E07-55B N-channel TrenchMOS standard level FET Rev. 01 — 29 January 2008 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive critical applications ...
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... pulsed Unclamped inductive load Repetitive rating defined in of 175 C. j(max) Rev. 01 — 29 January 2008 BUK7E07-55B N-channel TrenchMOS standard level FET Min Max - - - [1] Figure 2 and 3 - [2] [2] Figure see Figure ...
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... (1) Capped due to package. Fig 2. Continuous drain current as a function of Limit DSon DS D (1) 1 Rev. 01 — 29 January 2008 BUK7E07-55B N-channel TrenchMOS standard level FET 120 ( 100 150 mounting base temperature ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7E07-55B_1 Product data sheet N-channel TrenchMOS standard level FET Conditions vertical in still air Rev. 01 — 29 January 2008 BUK7E07-55B Min Typ Max - - 0. 003aac122 ...
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... see Figure /dt = 100 Rev. 01 — 29 January 2008 BUK7E07-55B Min Typ Max and 4.4 - ...
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... V (V) DS Fig 6. Drain-source on-state resistance as a function 003aac125 7.5 8.0 9.0 10 200 300 I (A) D Fig 8. Normalized drain-source on-state resistance Rev. 01 — 29 January 2008 BUK7E07-55B N-channel TrenchMOS standard level FET 25 R DSon ( gate-source voltage; typical values ...
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... C (nF 100 I ( Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 01 — 29 January 2008 BUK7E07-55B N-channel TrenchMOS standard level FET 003aab853 min typ max iss C oss ...
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... Fig 14. Gate-source voltage as a function of gate 003aac130 1.0 1.5 V (V) SD (1) Single-pulse; T (2) Single-pulse; T (3) Repetitive. Fig 16. Single-pulse and repetitive avalanche rating; Rev. 01 — 29 January 2008 BUK7E07-55B N-channel TrenchMOS standard level FET charge ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA low-profile 3-lead TO-220AB Rev. 01 — 29 January 2008 BUK7E07-55B N-channel TrenchMOS standard level FET mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 05-06-23 06-02-14 © NXP B.V. 2008. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 6. Revision history Document ID Release date BUK7E07-55B_1 20080129 BUK7E07-55B_1 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data - Rev. 01 — 29 January 2008 BUK7E07-55B Supersedes - © NXP B.V. 2008. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 29 January 2008 BUK7E07-55B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 29 January 2008 Document identifier: BUK7E07-55B_1 ...