BUK7Y12-55B NXP Semiconductors, BUK7Y12-55B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology

BUK7Y12-55B

Manufacturer Part Number
BUK7Y12-55B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
Dynamic characteristics
Q
D
DS
tot
DS(AL)S
DSon
GD
Q101 compliant
Suitable for standard level gate drive
sources
12 V and 24 V loads
Advanced braking systems (ABS)
Automotive systems
BUK7Y12-55B
N-channel TrenchMOS standard level FET
Rev. 03 — 7 April 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
gate-drain charge I
Conditions
T
V
see
T
V
T
see
I
R
T
V
D
D
j
mb
j
j(init)
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 61.8 A; V
= 20 A; V
Figure
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; see
= 50 Ω; V
= 25 °C; unclamped
1; see
DS
j
D
≤ 175 °C
mb
sup
GS
= 20 A;
= 44 V;
Figure
Figure 14
= 25 °C;
≤ 55 V;
= 10 V;
Figure 2
Figure 4
13;
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
8.2
-
14.8 -
Max Unit
55
61.8 A
105
12
129
V
W
mΩ
mJ
nC

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BUK7Y12-55B Summary of contents

Page 1

... BUK7Y12-55B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y12-55B Graphic symbol mbb076 Version © NXP B.V. 2010. All rights reserved ...

Page 3

... ° ≤ Ω 61 sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y12-55B Min Typ Max - - - 61 43.7 - ...

Page 4

... All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y12-55B N-channel TrenchMOS standard level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 003aac486 (1) (2) (3) ...

Page 5

... N-channel TrenchMOS standard level FET = 10 μ 100 μ 100 ms 10 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y12-55B 003aad475 (V) DS Min Typ Max - - 1.42 003aac479 t p δ ...

Page 6

... Ω R G(ext ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y12-55B Min Typ Max 4 0. 500 - ...

Page 7

... V (V) DS Fig 7. 003aad469 (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y12-55B N-channel TrenchMOS standard level FET 40 5 5.4 V ( Drain-source on-state resistance as a function of drain current; typical values. ...

Page 8

... V (V) GS Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y12-55B N-channel TrenchMOS standard level FET min typ max (V) GS 003aad696 0 60 120 T j © NXP B.V. 2010. All rights reserved. ...

Page 9

... Fig 15. Input, output and reverse transfer capacitances ( 175 °C T 25° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y12-55B N-channel TrenchMOS standard level FET function of drain-source voltage; typical values. 003aad471 0 (V) SD © ...

Page 10

... max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y12-55B N-channel TrenchMOS standard level FET detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...

Page 11

... Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y12-55B Supersedes BUK7Y12-55B_2 BUK7Y12-55B_1 © NXP B.V. 2010. All rights reserved ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y12-55B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y12-55B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 April 2010 Document identifier: BUK7Y12-55B ...

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