BUK7Y13-40B NXP Semiconductors, BUK7Y13-40B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology

BUK7Y13-40B

Manufacturer Part Number
BUK7Y13-40B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK7Y13-40B
Manufacturer:
NXP
Quantity:
72 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
Table 1.
Symbol
V
I
P
Dynamic characteristics
Q
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
GD
DSon
BUK7Y13-40B
N-channel TrenchMOS standard level FET
Rev. 03 — 26 May 2008
175 °C rated
Suitable for standard level gate drive
sources
12 V loads
Automotive ABS systems
Fuel pump and injection
Parameter
drain-source voltage
drain current
total power dissipation
gate-drain charge
drain-source on-state
resistance
non-repetitive
drain-source
avalanche energy
Quick reference
T
I
Conditions
T
V
see
V
V
T
12
I
R
T
D
D
j
mb
j
j(init)
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 10 A; V
= 58 A; V
Figure 1
= 25 °C; see
= 10 V; T
= 10 V; see
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
DS
sup
j
D
and
≤ 175 °C
mb
GS
= 32 V;
= 25 A;
≤ 40 V;
Figure 13
Figure 14
= 25 °C;
Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
Air bag
Automotive transmission control
Motors, lamps and solenoids
= 10 V;
Figure 2
4
and
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
5
11
-
Max Unit
40
58
85
-
13
85
V
A
W
nC
mJ

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BUK7Y13-40B Summary of contents

Page 1

... BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... sup °C; unclamped j(init) see Figure ° ≤ 10 μs; pulsed ° Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET Graphic symbol mbb076 Min Max - and ...

Page 3

... I AL (A) 10 (2) ( Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET 03na19 50 100 150 T (° tot = × 100 % P tot ( 25°C ) 003aab220 10 (ms) AL © NXP B.V. 2008. All rights reserved. 200 ...

Page 4

... Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7Y13-40B_3 Product data sheet DC 10 Conditions see Figure Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET 003aab218 = 10 μ 100 μ 100 ms V (V) DS ...

Page 5

... see Figure ° MHz see Figure 15 = 2.5 Ω Ω G(ext) Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET Min Typ Max 4 500 - 0. ...

Page 6

... ( Fig 9. Forward transconductance as a function of drain current; typical values Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET 003aab395 ( ° 003aab401 ( °C;V ...

Page 7

... DSon (mΩ 120 180 0 T (° °C j Fig 13. Drain-source on-state resistance as a function of drain current; typical values Rev. 03 — 26 May 2008 BUK7Y13-40B 03aa35 min typ max ( 003aab396 120 ...

Page 8

... Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values ( 175 ° ° 0.2 0.4 0.6 Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET 003aab397 C iss C oss C rss − ( 003aab398 0.8 1.0 V (V) SD © ...

Page 9

... D 1 (1) ( max 2.2 0.9 0.25 0.30 4.10 5.0 4.20 2.0 0.7 0.19 0.24 3.80 4.8 REFERENCES JEDEC JEITA MO-235 Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET detail ( 3.3 6.2 0.85 1.3 1.3 1.27 0.25 3.1 5.8 0.40 0.8 0.8 EUROPEAN ISSUE DATE ...

Page 10

... Product data sheet N-channel TrenchMOS standard level FET Data sheet status Product data sheet 5, maximum thermal resistance value updated Product data sheet Product data sheet Rev. 03 — 26 May 2008 BUK7Y13-40B Change notice Supersedes - BUK7Y13-40B_2 - BUK7Y13-40B_1 - - © NXP B.V. 2008. All rights reserved ...

Page 11

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET © NXP B.V. 2008. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK7Y13-40B_3 All rights reserved. Date of release: 26 May 2008 ...

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