BUK9Y14-40B NXP Semiconductors, BUK9Y14-40B Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology

BUK9Y14-40B

Manufacturer Part Number
BUK9Y14-40B
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK9Y14-40B
Manufacturer:
NXP
Quantity:
36 000
Part Number:
BUK9Y14-40B+115
Manufacturer:
NXP/恩智浦
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
Table 1.
Symbol
V
I
P
Dynamic characteristics
Q
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
GD
DSon
BUK9Y14-40B
N-channel TrenchMOS logic level FET
Rev. 03 — 2 June 2008
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Air bag
Automotive transmission control
Fuel pump and injection
Parameter
drain-source voltage
drain current
total power dissipation
gate-drain charge
drain-source on-state
resistance
non-repetitive
drain-source
avalanche energy
Quick reference
Conditions
T
V
see
T
V
V
V
T
13
I
R
T
D
j
mb
j
j(init)
GS
GS
DS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 56 A; V
Figure 4
= 25 °C; see
= 5 V; T
= 5 V; I
= 32 V; see
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
D
D
sup
j
mb
and
≤ 175 °C
= 10 A;
= 20 A;
GS
≤ 40 V;
= 25 °C;
Figure 12
Figure 14
Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
Automotive ABS systems
Diesel injection systems
Motors, lamps and solenoids
= 5 V;
1
Figure 2
and
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
9
12
-
Max Unit
40
56
85
-
14
89
V
A
W
nC
mJ

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BUK9Y14-40B Summary of contents

Page 1

... BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... sup °C; unclamped T j(init) see Figure ° ≤ 10 μs; pulsed ° Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET Graphic symbol mbb076 Min Max - and ...

Page 3

... I AL (A) 10 (2) ( Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET 03na19 50 100 150 T (° tot = × 100 % P tot ( 25°C ) 003aab220 10 (ms) AL © NXP B.V. 2008. All rights reserved. 200 ...

Page 4

... Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9Y14-40B_3 Product data sheet DC 10 Conditions see Figure Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET 003aab218 = 10 μ 100 μ 100 (V) ...

Page 5

... see Figure ° MHz see Figure 15 = 2.5 Ω Ω G(ext) Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET Min Typ Max 2.3 1.1 1 500 - 0. 100 ...

Page 6

... 25V DS Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET 003aab415 ( 003aab416 = 175 ° ° ...

Page 7

... R DSon (mΩ 120 180 0 T (° Fig 13. Drain-source on-state resistance as a function of drain current; typical values Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET 03ng52 max typ min 0 60 120 T (° A 003aab414 V ( ...

Page 8

... Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values ( 175 ° ° 0.0 0.2 0.4 0.6 Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET 003aab410 C iss C oss C rss − ( 003aab411 0.8 1.0 V (V) SD © ...

Page 9

... D 1 (1) ( max 2.2 0.9 0.25 0.30 4.10 5.0 4.20 2.0 0.7 0.19 0.24 3.80 4.8 REFERENCES JEDEC JEITA MO-235 Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET detail ( 3.3 6.2 0.85 1.3 1.3 1.27 0.25 3.1 5.8 0.40 0.8 0.8 EUROPEAN ISSUE DATE ...

Page 10

... Product data sheet Data sheet status Product data sheet V temperature operating range corrected DS Product data sheet Product data sheet Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET Change notice Supersedes BUK9Y14-40B_2 - BUK9Y14-40B_1 - - © NXP B.V. 2008. All rights reserved ...

Page 11

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET © NXP B.V. 2008. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK9Y14-40B_3 All rights reserved. Date of release: 2 June 2008 ...

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