BUK9Y53-100B NXP Semiconductors, BUK9Y53-100B Datasheet
BUK9Y53-100B
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BUK9Y53-100B Summary of contents
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... BUK9Y53-100B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 175 C rated 1.3 Applications I Automotive systems ...
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... pulsed unclamped inductive load 100 Figure 16. of 175 C. j(max) of 170 C. j(avg) Rev. 01 — 30 August 2007 BUK9Y53-100B N-channel TrenchMOS logic level FET Min Max - - - Figure 2 and 3 - Figure see Figure +175 55 +175 - ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9Y53-100B_1 Product data sheet 003aab844 (A) 150 200 Fig 2. Continuous drain current as a function Rev. 01 — 30 August 2007 BUK9Y53-100B N-channel TrenchMOS logic level FET 100 150 ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9Y53-100B_1 Product data sheet Conditions Figure Rev. 01 — 30 August 2007 BUK9Y53-100B N-channel TrenchMOS logic level FET Min Typ Max - - 2 003aab219 ...
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... Figure 2 see Figure /dt = 100 Rev. 01 — 30 August 2007 BUK9Y53-100B N-channel TrenchMOS logic level FET Min Typ Max 100 - - and 10 1.1 1 2 500 - 2 ...
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... V (V) DS Fig 6. Drain-source on-state resistance as a function 003aab422 3 (A) D Fig 8. Normalized drain-source on-state resistance Rev. 01 — 30 August 2007 BUK9Y53-100B N-channel TrenchMOS logic level FET 56 DSon gate-source voltage; typical values 3 a ...
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... Fig 10. Sub-threshold drain current as a function of 003aab425 (pF) 15000 (A) D Fig 12. Input, output and reverse transfer capacitances Rev. 01 — 30 August 2007 BUK9Y53-100B N-channel TrenchMOS logic level FET ( min typ ...
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... V (V) GS Fig 14. Gate-source voltage as a function of gate 003aab419 0.6 0.8 1.0 V (V) SD (1) Single-pulse; T (2) Single-pulse; T (3) Repetitive. Fig 16. Single-pulse and repetitive avalanche rating; Rev. 01 — 30 August 2007 BUK9Y53-100B N-channel TrenchMOS logic level FET ...
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... 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 Rev. 01 — 30 August 2007 BUK9Y53-100B N-channel TrenchMOS logic level FET detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION SOT669 ...
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... NXP Semiconductors 8. Revision history Table 6. Revision history Document ID Release date BUK9Y53-100B_01 20070830 BUK9Y53-100B_1 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Rev. 01 — 30 August 2007 BUK9Y53-100B Supersedes - © NXP B.V. 2007. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 30 August 2007 BUK9Y53-100B N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK9Y53-100B_1 All rights reserved. Date of release: 30 August 2007 ...