BSH121

... BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSH121 in SOT323. 2. Features TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. Applications ...

... T = 100 4.5 V; Figure pulsed Figure Figure pulsed Rev. 01 — 14 August 2000 BSH121 Typ Max Unit 55 V 300 mA 0.7 W 150 C 2.3 4.0 2.4 5.0 3.1 8.0 Min Max Unit 300 ...

... der Fig 2. Normalized continuous drain current as a function of solder point temperature. R DSon = D. Rev. 01 — 14 August 2000 BSH121 03aa25 120 100 100 125 150 4 ------------------ - ...

... Z th(j-sp) (K/ 0.2 0.1 0.05 10 0.02 single pulse Mounted on metal clad substrate. pulse duration. Rev. 01 — 14 August 2000 BSH121 Value Unit 180 K/W 400 K/W 03aa70 (s) © Philips Electronics N.V. 2000. All rights reserved. ...

... Figure 0 Figure MHz; Figure 250 ; Rev. 01 — 14 August 2000 BSH121 Typ Max Unit 1.0 1 2.5 V 0.01 1 100 nA 2.4 5 7.4 2.3 4 3.1 8 380 mS 1 ...

... Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03aa74 4.5 V 0.5 0 Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 14 August 2000 BSH121 Min Typ Max 0. > DSon 0.6 0 ...

... C iss , C oss , C rss (pF 150 o C 0.5 0 MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 14 August 2000 BSH121 03aa89 ( min typ 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 ...

... Product specification N-channel enhancement mode field-effect transistor 03aa77 1 Fig 14. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 14 August 2000 BSH121 03ab08 0. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ...

... scale 2.2 1.35 2.2 0.45 1.3 0.65 1.8 1.15 2.0 0.15 REFERENCES JEDEC EIAJ SC-70 Rev. 01 — 14 August 2000 BSH121 detail 0.23 0.2 0.2 0.13 EUROPEAN ISSUE DATE PROJECTION 97-02-28 © Philips Electronics N.V. 2000. All rights reserved. SOT323 ...

... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20000814 - Product specification; initial version. 9397 750 07302 Product specification N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 BSH121 © Philips Electronics N.V. 2000. All rights reserved ...

... Rev. 01 — 14 August 2000 BSH121 Philips Semiconductors assumes no © Philips Electronics N.V. 2000 All rights reserved. ...

... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 01 — 14 August 2000 BSH121 © Philips Electronics N.V. 2000. All rights reserved ...

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 14 August 2000 Document order number: 9397 750 07302 N-channel enhancement mode field-effect transistor Printed in The Netherlands BSH121 ...