Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

BSS138BKS

Manufacturer Part NumberBSS138BKS
DescriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
ManufacturerNXP Semiconductors
BSS138BKS datasheet
 
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BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1 — 12 August 2011
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
1.4 Quick reference data
Table 1.
Symbol
Per transistor
V
DS
V
GS
I
D
Static characteristics (per transistor)
R
DSon
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
Quick reference data
Parameter
Conditions
drain-source voltage
T
= 25 °C
j
gate-source voltage
drain current
V
GS
T
amb
drain-source on-state
V
GS
resistance
I
= 320 mA; T
D
2
.
Product data sheet
ESD protection up to 1.5 kV
AEC-Q101 qualified
Low-side loadswitch
Switching circuits
Min
Typ
-
-
-20
-
[1]
= 10 V;
-
-
= 25 °C
= 10 V;
-
1
= 25 °C
j
Max Unit
60
V
20
V
320
mA
1.6

BSS138BKS Summary of contents

  • Page 1

    ... BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  ...

  • Page 2

    ... Simplified outline SOT363 (TSSOP6) Description plastic surface-mounted package; 6 leads Marking code LG% All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS Graphic symbol Version SOT363 [1] © NXP B.V. 2011. All rights reserved. G2 017aaa256 ...

  • Page 3

    ... °C; single pulse; t amb °C amb ° °C amb °C amb HBM All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS Min Max - 60 -20 20 [1] - 320 [1] - 210 ≤ 10 µs - 1.2 p [2] - 280 ...

  • Page 4

    ... Product data sheet 001aao121 75 125 175 T (°C) j Fig drain mounting pad All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET 120 I der (%) -75 - Normalized continuous drain current as a function of junction temperature ...

  • Page 5

    ... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138BKS Product data sheet 60 V, 320 mA dual N-channel Trench MOSFET Conditions in free air in free air − All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS Min Typ Max [1] - 390 445 [2] - 340 390 - ...

  • Page 6

    ... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138BKS Product data sheet 60 V, 320 mA dual N-channel Trench MOSFET − All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS 017aaa035 (s) p © NXP B.V. 2011. All rights reserved ...

  • Page 7

    ... Ω °C G(ext 300 mA ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS Min Typ Max Unit 0.48 1.1 1 µ µ µ ...

  • Page 8

    ... V (V) DS Fig 7. aaa-000160 R DS(on) (Ω) (4) (5) (6) 0.3 0.4 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET -3 -4 (1) ( 0.5 1.0 1 ° (1) minimum values (2) typical values (3) maximum values ...

  • Page 9

    ... C (pF) (1) (2) (3) 120 180 T (°C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET 2 1.5 1 0 120 a function of junction temperature; typical values 2 ...

  • Page 10

    ... Q (nC °C amb Fig 15. Gate charge waveform definitions 0 (A) 0.3 (1) 0.2 0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) ...

  • Page 11

    ... BSS138BKS Product data sheet 60 V, 320 mA dual N-channel Trench MOSFET duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS © NXP B.V. 2011. All rights reserved ...

  • Page 12

    ... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-88 All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION ...

  • Page 13

    ... All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot363_fr solder lands 2.5 solder resist occupied area Dimensions in mm ...

  • Page 14

    ... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date BSS138BKS v.1 20110812 BSS138BKS Product data sheet 60 V, 320 mA dual N-channel Trench MOSFET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 ...

  • Page 15

    ... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS © NXP B.V. 2011. All rights reserved ...

  • Page 16

    ... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS © NXP B.V. 2011. All rights reserved ...

  • Page 17

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 12 August 2011 Document identifier: BSS138BKS ...