BSS138BKS NXP Semiconductors, BSS138BKS Datasheet - Page 4

• Manufacturer Part Number: BSS138BKS
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BSS138BKS
Product data sheet
Fig 1.
Fig 3.
P
(%)
der
120
80
40
0
-75
function of junction temperature
voltage
Normalized total power dissipation as a
I
(1) t
(2) t
(3) DC; T
(4) t
(5) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
is a single pulse
p
p
p
= 1 ms
= 10 ms
= 100 ms
-25
sp
amb
(A)
I
D
10
10
10
= 25 °C
10
= 25 °C; 1 cm
-1
-2
-3
1
10
25
-1
75
2
drain mounting pad
125
All information provided in this document is subject to legal disclaimers.
001aao121
T
j
(°C)
1
175
Rev. 1 — 12 August 2011
Fig 2.
(%)
I
der
120
60 V, 320 mA dual N-channel Trench MOSFET
80
40
0
-75
function of junction temperature
Normalized continuous drain current as a
10
-25
V
DS
(V)
25
aaa-000172
(1)
(2)
(3)
(4)
(5)
BSS138BKS
75
10
2
125
© NXP B.V. 2011. All rights reserved.
001aao122
T
j
(°C)
175
4 of 17