BSS138BKS NXP Semiconductors, BSS138BKS Datasheet - Page 7

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

BSS138BKS

Manufacturer Part Number
BSS138BKS
Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS138BKS
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
7. Characteristics
Table 7.
BSS138BKS
Product data sheet
Symbol
Static characteristics (per transistor)
V
V
I
I
R
g
Dynamic characteristics (per transistor)
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode (per transistor)
V
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
forward
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
Conditions
I
I
V
V
V
V
V
V
V
V
V
V
V
V
T
V
T
V
R
I
All information provided in this document is subject to legal disclaimers.
D
D
S
j
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
G(ext)
= 25 °C
= 25 °C
= 300 mA; V
= 250 µA; V
= 250 µA; V
= 60 V; V
= 60 V; V
= 10 V; I
= 30 V; I
= 10 V; f = 1 MHz; V
= 40 V; R
= 20 V; V
= -20 V; V
= 10 V; V
= -10 V; V
= 10 V; I
= 10 V; I
= 4.5 V; I
= 2.5 V; I
= 6 Ω; T
Rev. 1 — 12 August 2011
D
D
D
D
D
D
GS
GS
DS
DS
L
GS
DS
DS
DS
= 200 mA; T
= 300 mA; V
= 320 mA; T
= 320 mA; T
GS
j
= 200 mA; T
= 10 mA; T
= 250 Ω; V
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
; T
j
j
j
j
GS
j
j
j
= 25 °C
= 150 °C
= 25 °C
= 25 °C
j
j
GS
= 25 °C
= 25 °C
= 25 °C
j
= 25 °C
= 25 °C
j
j
j
GS
= 25 °C
j
= 0 V;
= 25 °C
= 25 °C
= 150 °C
60 V, 320 mA dual N-channel Trench MOSFET
= 25 °C
= 10 V;
= 4.5 V;
Min
60
0.48
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
BSS138BKS
Typ
-
1.1
-
-
-
-
-
-
1
2
1.1
1.4
700
0.6
0.1
0.2
42
7
4
5
5
38
20
0.8
© NXP B.V. 2011. All rights reserved.
-
Max
-
1.6
1
10
10
10
1
1
1.6
3.2
2.2
6.5
-
0.7
-
-
56
-
10
-
76
-
1.2
Unit
V
V
µA
µA
µA
µA
µA
µA
mS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
7 of 17

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