BSS138BKS NXP Semiconductors, BSS138BKS Datasheet - Page 9

• Manufacturer Part Number: BSS138BKS
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BSS138BKS
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
0.6
0.4
0.2
1.5
0.5
0
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
0
D
DS
= 0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
x R
0
DSon
1.0
(2)
DS
= V
60
GS
(1)
2.0
(1)
120
V
(2)
All information provided in this document is subject to legal disclaimers.
GS
aaa-000164
aaa-000162
T
j
(V)
(°C)
(1)
(2)
(3)
180
3.0
Rev. 1 — 12 August 2011
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
10
1.5
0.5
60 V, 320 mA dual N-channel Trench MOSFET
10
2
1
0
1
2
10
-60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1) C
(2) C
(3) C
-1
iss
oss
rss
0
GS
1
(1)
(2)
(3)
= 0 V
60
BSS138BKS
10
120
V
© NXP B.V. 2011. All rights reserved.
DS
T
aaa-000163
aaa-000165
j
= (°C)
(V)
180
10
2
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