BSS138BKW NXP Semiconductors, BSS138BKW Datasheet
BSS138BKW
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BSS138BKW Summary of contents
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... BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching ...
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... Simplified outline SOT323 (SC-70) Description plastic surface-mounted package; 3 leads Marking code AD% All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Graphic symbol 017aaa255 Version SOT323 [1] © NXP B.V. 2011. All rights reserved. ...
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... ° °C amb HBM 001aao121 75 125 175 T (°C) j Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Min - -20 [ °C - [1] = 100 °C - ≤ 10 µ [ ...
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... Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm BSS138BKW Product data sheet 1 2 drain mounting pad Conditions All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET aaa-000173 (1) (2) (3) (4) (5) 2 ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138BKW Product data sheet − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET 017aaa028 (s) p 017aaa029 2 10 ...
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... Ω °C G(ext 300 mA ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Min Typ Max 0.48 1.1 1 ...
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... V (V) DS Fig 7. aaa-000160 R DS(on) (Ω) (4) (5) (6) 0.3 0.4 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET -3 -4 (1) ( 0.5 1.0 1 ° (1) minimum values (2) typical values (3) maximum values ...
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... C (pF) (1) (2) (3) 120 180 T (°C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET 2 1.5 1 0 120 a function of junction temperature; typical values 2 (1) ...
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... Q (nC °C amb Fig 15. Gate charge waveform definitions 0 (A) 0.3 (1) 0.2 0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) aaa-000167 (2) 1 ...
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... BSS138BKW Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-70 All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION SOT323 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot323_fr solder lands solder resist occupied area 1.8 Dimensions in mm ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date BSS138BKW v.1 20110812 BSS138BKW Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 12 August 2011 Document identifier: BSS138BKW ...